CAO Yu-lian, WANG Le, PAN Yu-zhai, LIAO Xin-sheng, CHENG Dong-ming, LIU Yun, WANG Li-jun. Catastrophic Damage of High-power Semiconductor Quantum Well Laser During the Measurement[J]. Chinese Journal of Luminescence, 2002,23(5): 477-480
CAO Yu-lian, WANG Le, PAN Yu-zhai, LIAO Xin-sheng, CHENG Dong-ming, LIU Yun, WANG Li-jun. Catastrophic Damage of High-power Semiconductor Quantum Well Laser During the Measurement[J]. Chinese Journal of Luminescence, 2002,23(5): 477-480DOI:
Catastrophic Damage of High-power Semiconductor Quantum Well Laser During the Measurement
This paper manifested a catastrophic damage due to electrical damage during the measurement. However
electrical surge is caused by external conditions such as an electrical biasing situation
as a result
the p-n junction is damaged or breakdown so that the current-voltage relation become electrically short at the instantaneous current
which can be manifested from the
P-I
curve and
V-I
characteristics: a sudden decrease in light output power is observed
moreover
the voltage is no longer changing dependence on the increasing of current with the drop-off of output power. According to N. I. Katasavets
et al
.
a conclusion can be made that fact overheating at
J
<
2 000/cm
2
in all types of LDs is due to the absorption of intrinsic laser radiation at the facet and to process nonradiative surface recombination. Facet overheating has superlinear dependence on output optical power. Then through the scanning electron microscopy (SEM)
we indeed find that the melting region occured
also there is cracks at the facet which may be brought by the stress-induced by cleaving to form the facets
so laser no longer stimulated emitting
by contrast
another rapid degration is also shown in the paper
at the same time
both degrations were analyzed on the basis of theory
which manifested the degration of laser are principally due to material
structure and process of the laser
electrical surge is only accelerate the degration which origined from material or fabrication
but it is still important to understand the catastrophic or rapid damage related to electrical surge during the device measuring.