Semiconductor light-emitting materials are very important to visible displaying devices and to optoelectronics. In view of that silicon is a nonfungible semiconductor microelectronics material due to its excellent quality and low cost

therefore in the field of optoelectronics

people have long been looking forward to the realization of Si-based integrated optoelectronics by taking advantage of Si planar technique. The Si-based light emitting materials doped by rare-earth have received increasing attention in recent years. As for the rare-earth doped materials

neodymium (Nd

3+

) ion is a very versatile active ion which is widely used in laser crystal and fluoride glass due to the capabilities for the integrated optoelectronics.We reported the optical properties of Nd-incorporated into crystalline silicon by MEVVA (Metal Vapor Vacuum Arc) ion source implantation. In our work

the doses of the Nd ion were 8×10

16

1×10

17

3×

17

cm

-2

respectively. The low Nd ion flux (~4.5μA·cm

-2

) was employed in case of the increasing of the target temperature during the implantation. The samples were subsequently treated by rapid thermal annealing (RTA) at 700

800

900 and 1000℃ for 20s under ambient nitrogen gas. Comprehensive analysis including scanning electron microscope (SEM) and X-ray diffraction (XRD) indicated that the morphology and the structure of the samples were closely relative to the dose of implantation and the temperature of rapid thermal annealing

and NdSi was formed under the annealed temperature of 1000℃. The blue light band (410~430nm) and red light band (746nm) photoluminescence were observed under the excitation of 254nm (~5.0eV)

the intensity of those light emission gradually ascended with increasing the annealing temperature. The red emission (~746nm) is related to the intra-4f shell of Nd

3+

radiation transition (

4

F

7/2

4

S

3/2

→

4

I

9/2

). the correlation of the photoluminescence and the structure are also discussed.