Broad Band Photoluminescence in Active Channels Produced by Electron Beam Lithography on LiF Films
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Broad Band Photoluminescence in Active Channels Produced by Electron Beam Lithography on LiF Films
Chinese Journal of LuminescenceVol. 22, Issue 3, Pages: 294-296(2001)
作者机构:
1. 中国科学院激发态物理开放实验室 长春,130021
2. 中国科学院长春光学精密机械与物理研究所, 吉林长春130021
3. IROE-CNR firenze,Italy
作者简介:
基金信息:
DOI:
CLC:O482.3
Received:10 March 2001,
Revised:15 May 2001,
Published:30 August 2001
稿件说明:
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郑杰, 李燕, 徐迈, 范希武, Righini G C. 电子束照射LiF薄膜有源沟道的宽带光致发光[J]. 发光学报, 2001,22(3): 294-296
ZHENG Jie, LI Yan, XU Mai, FAN X W, Righini G C. Broad Band Photoluminescence in Active Channels Produced by Electron Beam Lithography on LiF Films[J]. Chinese Journal of Luminescence, 2001,22(3): 294-296
郑杰, 李燕, 徐迈, 范希武, Righini G C. 电子束照射LiF薄膜有源沟道的宽带光致发光[J]. 发光学报, 2001,22(3): 294-296DOI:
ZHENG Jie, LI Yan, XU Mai, FAN X W, Righini G C. Broad Band Photoluminescence in Active Channels Produced by Electron Beam Lithography on LiF Films[J]. Chinese Journal of Luminescence, 2001,22(3): 294-296DOI:
Broad Band Photoluminescence in Active Channels Produced by Electron Beam Lithography on LiF Films
Alkali halide crystals containing color centers (CCs) are well known as laser active media in optically pumped tunable solid state lasers generally operating at liquid nitrogen temperature. Among them
lithium fluoride has several unique characteristics because it can hold laser active defects stable at room temperature (RT) and emit in the visible and near infrared. Despite the deep knowledge on alkali halide crystals
little attention was devoted to non epitaxial alkali halide films. In the last years we devoted our attention to the growth and characterization of LiF films in order to study the spectroscopic properties of CCs created by low energy electron beams for application in integrated active devices. Polycrystalline LiF thin films of total thickness t between 0.5 and 3.8μm were grown by thermal evaporation on amorphous substrates
mantained at fixed temperature
T
s
between 30 and 350℃ during deposition. Their structural
morphological and optical properties are strongly dependent on the evaporation parameters
especially on
T
s
. Low energy electron beam irradiation gives rise to the efficient formation of stable F
2
and F
3
+
centers. Properties of photoluminescence at room temperature were studied. It shows that active channels (F
2
and F
3
+
centers) with sizeable optical gain and a substantial increase of the refractive index are promising for the realization of active optical waveguide devices which are tunable in the visible.