Growth of InN on GaAs(001) under High N2 Flux by MBE

QIN Zhi-xin; CHEN Zhi-zhong; ZHANG Guo-yi

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Growth of InN on GaAs(001) under High N₂ Flux by MBE

更新时间：2020-08-11

- Growth of InN on GaAs(001) under High N₂ Flux by MBE
- Chinese Journal of Luminescence Vol. 22, Issue 3, Pages: 209-212(2001)
- 作者机构：
  
  北京大学物理系, 介观物理实验室北京,100871
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN482.31
- Received：05 January 2001，
  
  Revised：20 July 2001，
  
  Published：30 August 2001
- 稿件说明：
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秦志新, 陈志忠, 张国义. 高N2气流下在GaAs(001)上用MBE法生长InN[J]. 发光学报, 2001,22(3): 209-212

QIN Zhi-xin, CHEN Zhi-zhong, ZHANG Guo-yi. Growth of InN on GaAs(001) under High N2 Flux by MBE[J]. Chinese Journal of Luminescence, 2001,22(3): 209-212
秦志新, 陈志忠, 张国义. 高N2气流下在GaAs(001)上用MBE法生长InN[J]. 发光学报, 2001,22(3): 209-212 DOI：

QIN Zhi-xin, CHEN Zhi-zhong, ZHANG Guo-yi. Growth of InN on GaAs(001) under High N2 Flux by MBE[J]. Chinese Journal of Luminescence, 2001,22(3): 209-212 DOI：

摘要

在N

气压为2.67×10

-2

500℃的条件下

用MBE方法在GaAs(001)衬底上生长了InN的外延层。生长期间

In流量以3×10

到24×10

atoms/cm

·s范围内变化。用X射线衍射(XRD)和反射高能电子衍射(RHEED)法对InN膜进行了表征。发现在生长的初始阶段

所生长的InN属立方相

但随着外延层厚度的增加出现了InN层由立方相向六角相的相变。X射线倒易空间图形测量表明的在GaAs(001)衬底上生长的六角相InN其

-轴主要沿GaAs的〈111〉B方向取向。

Abstract

InN epilayers have been grown on GaAs(001)substrates by MBE at 500℃ under the N

pressure of 2.67×10

-2

Pa.During the growth

the In flux was varied from 3×10

to 24×10

atoms/cm

sec.The InN films were characterized by X-ray diffraction (XRD) and reflection high energy electron diffraction (RHEED) measurements.It is found that the cubic phase InN was grown at initial stage of growth

but the transition from cubic phase InN to hexagonal phase InN occurred with increase of the thickness of InN epilayer.The X-ray reciprocal space mapping (RSM) measurements show that the hexagonal phase InN whose

-axes are oriented in the GaAs

111

B direction is dominantly grown on (001) GaAs.

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