Photoluminescence of Nanorods SiC

ZHANG Hong-tao; XU Zhong-yang; XU Hui; ZHU Chang-hong

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Photoluminescence of Nanorods SiC

更新时间：2020-08-11

- Photoluminescence of Nanorods SiC
- Chinese Journal of Luminescence Vol. 22, Issue 1, Pages: 66-70(2001)
- 作者机构：
  
  1. 华中理工大学电子科学与技术系, 湖北武汉430074
  2. 湖北工学院电气工程与计算机科学系,湖北武汉,430074
  3. 华中理工大学激光研究院,湖北武汉,430074
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472.3
- Received：02 February 2000，
  
  Revised：04 August 2000，
  
  Published：28 February 2001
- 稿件说明：
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张洪涛, 徐重阳, 许辉, 朱长虹. SiC纳米晶须的光致发光研究[J]. 发光学报, 2001,22(1): 66-70

ZHANG Hong-tao, XU Zhong-yang, XU Hui, ZHU Chang-hong. Photoluminescence of Nanorods SiC[J]. Chinese Journal of Luminescence, 2001,22(1): 66-70
张洪涛, 徐重阳, 许辉, 朱长虹. SiC纳米晶须的光致发光研究[J]. 发光学报, 2001,22(1): 66-70 DOI：

ZHANG Hong-tao, XU Zhong-yang, XU Hui, ZHU Chang-hong. Photoluminescence of Nanorods SiC[J]. Chinese Journal of Luminescence, 2001,22(1): 66-70 DOI：

摘要

纳米碳化硅晶须作为一维半导体

其光学性质一直受到关注。研究结果显示

在Ar

激光(514.5nm)激发下

纳米碳化硅晶须室温下发出极其强烈的红光

这种发光导致喇曼光散射消失

瑞利弹性散射极度减弱。由于低维半导体的体表面大

对称平移受到一定程度的破坏

应该产生大量的缺陷

其发光也应该是表面发光或缺陷发光。但分析表明这可能是低维半导体碳化硅室温下首次发现的极其稳定的强束缚激子或表面发光现象。对其发光机制给予讨论。并且探讨了合适条件下出现喇曼受激辐射

初步认为喇曼散射截面的增大会促进喇曼受激辐射的产生。

Abstract

The photoluminescence(PL) of nanorods SiC was demonstrated in this paper. The excited light source is Ar

(514nm)laser

the apparatus is Renishaw MKE-1000 Raman spectrometer. The nanorod means diameter is 2～4nm

and length is 40～60nm. The PL peak of nanorods SiC is 654nm

its intensity is the highest SiC PL spectrum in previous experiments. Because the nanorods SiC is a superstrong scattering media

at the threshold for photon localization

the diffusion modes of light interfere strongly and are converted into a continuous spectrum of localized cavity modes in the extended medium

in which emitting light may be self-organized into a coherent states. The striking effect is that the threshold for photon localization is very low. The output light is Raman random laser.

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