Alow-high voltage level shifter

which is appropriate to field emission display (FED) driver IC

including its design and functions analysis is proposed. This circuit can operate safely under the conditions of 100 Vsupply and 10 mAoutput current. The maximum frequency reaches 20 MHz. The rise time and fall time of output waveform are 14 and 25 ns respectively while its load capacitance is 50 pF. The compatibility of the high voltage technology with low voltage technology is also discussed. LDMOS (Lateral-double diffused MOS) structure is used for the level shifter’s high voltage devices

HVCMOS ( High voltage CMOS) process is compatible with the standard 0.8 μm CMOStechnology which can integrate high voltage devices and low voltage devices on one chip. This process effectively decrease the production cost and increase the packing density of panel driving system.Moreover

the influences of thick gate oxide process for the High Voltage PMOSdevices during the fabricating processes on threshold of low voltage devices and high voltage NMOSFETare investigated.