With the flying development of nanotechnology

the studies on the low dimension system have been greatly improved

especially on the nano semiconductor quantum dot.Since its newly opto-electric and transportation characteristics

it is becoming a heat field in the study of quantum fanctional device.Since 1980s

Tokuda has investigated the bounding polaron in the Coulombic field using LLP variational method.More and more people pay attention to the field of bounding polaron

which is not only bound by the hydrogen but also interact with LOphonon in the ionic crystal or polar semiconductor.Some anothers also use other kinds of methods to investigate the properties of bound polaron in quantum dot theoretically and expercmentally.The vibrational frequency

the ground state energy

the interaction en-ergy and the average number of optical phonons of the bound polaron in a quantum dot have been discussed using the linear combination operator method by the present authors.However

the influences of the temperature on the properties of bound polaron in a quantum dot has not been investigated so far.In fact

the case of a finite temperature is more significant.The influences of the temperature on the properties of weak-coupling bound polaron in a quantum dot are studied.The vibrational frequency

the ground state energy and the mean number of the phonons of the weak-coupling bound polaron in a quantum dot are derived by using the linear combination operator and the unitary transformation method.The temperature dependence of the vibrational frequency

the ground state energy and the mean number of the phonons of the weak-coupling bound polaron in a quantum dot are discussed.Nume-rical calculations

for the ZnS crystal as an example

are performed and the results indicate that the vibrational frequency

the ground state energy and the mean number of the phonons of the weak-coupling bound polaron in a quantum dot will increase with increasing the temperature.The ground state energy of bound polaron will increase strongly with increasing the confinement strength of the quantum dot.