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Properties of Weak-coupling Exciton in Polar Semiconductor Quantum Dot
更新时间:2020-08-11
    • Properties of Weak-coupling Exciton in Polar Semiconductor Quantum Dot

    • Chinese Journal of Luminescence   Vol. 27, Issue 4, Pages: 457-462(2006)
    • CLC: O472.3;O469
    • Received:20 August 2005

      Revised:24 November 2005

      Published:20 July 2006

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  • LI Zhi-xin, XIAO Jing-lin. Properties of Weak-coupling Exciton in Polar Semiconductor Quantum Dot[J]. Chinese Journal of Luminescence, 2006,27(4): 457-462 DOI:

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Related Author

LI Zhi-xin
WANG Hong-yan
XIN Wei
XIAO Jing-lin
SHANG De-shuang
WANG Ji-qing
MAO Hui-bing
YANG Ping-xiong

Related Institution

Department of Mathematics and Physics, Hebei Normal University of Science & Technology
College of Physics and Electronic Information, Inner Mongolia National University
Key Laboratory of Polarized Materials and Devices, East China Normal University
Department of Physics, Inner Mongolia University
College of Sciences and Technology, InnerMongolia University
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