p-type ZnO and ZnO p-n Homojunction LED by Using Activated N2 Doping

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p-type ZnO and ZnO p-n Homojunction LED by Using Activated N₂ Doping

更新时间：2020-08-11

- p-type ZnO and ZnO p-n Homojunction LED by Using Activated N₂ Doping
- Chinese Journal of Luminescence Vol. 27, Issue 6, Pages: 1026-1028(2006)
- 作者机构：
  
  1. 中国科学院, 激发态物理重点实验室,吉林长春,130033
  2. 中国科学院, 研究生院北京,100049
  3. 长春理工大学, 理学院,吉林长春,130022
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN383.1;O482.1
- Received：25 August 2006，
  
  Revised：24 September 2006，
  
  Published：20 November 2006
- 稿件说明：
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张振中, 魏志鹏, 吕有明, 矫淑杰, 姚斌, 申德振, 张吉英, 赵东旭, 李炳辉, 郑著宏, 范希武. N2掺杂p型ZnO及ZnO同质p-n结LED的制备[J]. 发光学报, 2006,27(6): 1026-1028

ZHANG Zhen-zhong, WEI Zhi-peng, LÜ You-ming, JIAO Shu-jie, YAO Bin, SHEN De-zhen, ZHANG Ji-ying, ZHAO Dong-xu, LI Bing-hui, ZHENG Zhu-hong, FAN X W. p-type ZnO and ZnO p-n Homojunction LED by Using Activated N2 Doping[J]. Chinese Journal of Luminescence, 2006,27(6): 1026-1028
张振中, 魏志鹏, 吕有明, 矫淑杰, 姚斌, 申德振, 张吉英, 赵东旭, 李炳辉, 郑著宏, 范希武. N2掺杂p型ZnO及ZnO同质p-n结LED的制备[J]. 发光学报, 2006,27(6): 1026-1028 DOI：

ZHANG Zhen-zhong, WEI Zhi-peng, LÜ You-ming, JIAO Shu-jie, YAO Bin, SHEN De-zhen, ZHANG Ji-ying, ZHAO Dong-xu, LI Bing-hui, ZHENG Zhu-hong, FAN X W. p-type ZnO and ZnO p-n Homojunction LED by Using Activated N2 Doping[J]. Chinese Journal of Luminescence, 2006,27(6): 1026-1028 DOI：

摘要

采用射频等离子体辅助分子束外延方法

以N

作为掺杂源

以O

作为辅助分解的气体和氧源

通过等离子体光谱的实时监测来控制掺杂源中各组分的含量

制备了p型ZnO薄膜及同质p-n结。

I-V

曲线显示该p-n结具有整流特性

直流驱动下获得了稳定的室温电致发光

包括位于420nm附近的发光峰和500~700nm的发光带。

Abstract

p-type ZnO has attracted more and more attention because it is necessary to fabricate ZnO devices based on current injection. More and more improvements on p-type ZnO and p-n junctions are reported. However

electroluminescence in these works was rarely observed. We have already succeed in fabricating a ZnO p-n junction LED on sapphire substrate by using activated NO plasma. Here

was used as the acceptor dopant and O

was used as assistant gas as well as oxygen source. Emission spectra of the N

-O

plasma were monitored in situ to adjust parameters timely. Electronics measurements of the as-grown p-type ZnO on sapphire shows a carrier concentration of 1.2×10

-3

and mobility approach to 1 cm

·V

-1

·s

-1

. The LED based on p-n junction shows a certain rectification effect and the turn on voltage is 3.10 V

which is consistent with the bandgap of ZnO. Electroluminescence spectra shows two bands: one is at 420 nm

from donoracceptor pairs; and the other ranges from 500 to 700 nm

which is attributed to the emissions from point defects in ZnO.

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