ZnO has become a promising material for ultraviolet light emitting diodes and lasers

transparent high power electronic devices dut to their wide direct band gap and large exciton binding energy. Undoped ZnO exhibits intrinsic n-type conductivity

and it is

therefore

difficult to achieve p-type ZnO. Among group-V dopants

N is considered to be a shallow p-type impurity; however

there are stillmany difficulties forusingN as dopan.t Recently

much efforthas been devoted to fabricate p-type ZnO with codopants. So it is important to understand the codoping effecton electronic structures of wurtzite ZnO.