ZnO Based Luminous and Diluted Magnetic Semiconductors Prepared by PVA Methods

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ZnO Based Luminous and Diluted Magnetic Semiconductors Prepared by PVA Methods

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- ZnO Based Luminous and Diluted Magnetic Semiconductors Prepared by PVA Methods
- Chinese Journal of Luminescence Vol. 27, Issue 6, Pages: 939-944(2006)
- 作者机构：
  
  1. 安徽大学, 物理与材料科学学院, 安徽, 合肥, 230039
  2. 常州工学院, 理学院, 江苏, 常州, 213016
  3. 光电信息获取与控制教育部重点实验室,安徽合肥,230039
- 作者简介：
- 基金信息：
- DOI：
  CLC： O482.31
- Received：29 January 2006，
  
  Revised：24 April 2006，
  
  Published：20 November 2006
- 稿件说明：
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杨景景, 方庆清, 王保明, 王翠平, 陈辉, 李雁, 刘艳美, 吕庆荣. 采用PVA方法制备ZnO基发光稀磁半导体[J]. 发光学报, 2006,27(6): 939-944

YANG Jing-jing, FANG Qing-qing, WANG Bao-ming, WANG Cui-ping, CHEN Hui, LI Yan, LIU Yan-mei, LÜ Qing-rong. ZnO Based Luminous and Diluted Magnetic Semiconductors Prepared by PVA Methods[J]. Chinese Journal of Luminescence, 2006,27(6): 939-944
杨景景, 方庆清, 王保明, 王翠平, 陈辉, 李雁, 刘艳美, 吕庆荣. 采用PVA方法制备ZnO基发光稀磁半导体[J]. 发光学报, 2006,27(6): 939-944 DOI：

YANG Jing-jing, FANG Qing-qing, WANG Bao-ming, WANG Cui-ping, CHEN Hui, LI Yan, LIU Yan-mei, LÜ Qing-rong. ZnO Based Luminous and Diluted Magnetic Semiconductors Prepared by PVA Methods[J]. Chinese Journal of Luminescence, 2006,27(6): 939-944 DOI：

摘要

不同的制备工艺对ZnO薄膜的微结构和性能有很大的影响

为了得到成本较低

样品具有较好特性的实验方法

对于制备手段进行了探索。使用PVA溶胶-凝胶法制备了Zn

0.88

0.12

O薄膜

研究了不同退火工艺对其微结构的影响。对于Zn

0.88

0.12

O样品的微结构和室温下的铁磁性和发光特性

具体比较分析了产生原因。对比了Co掺杂和复合Co、Fe掺杂Zn

0.88

(Co

0.5

)

0.12

O样品的微结构

采用振动样品磁强计(VSM)测量了样品的磁特性

发现单一掺杂的薄膜具有更好的晶体质量和更强的磁性。

Abstract

The different preparation method has tremendous influence on the microstructure and the performance of ZnO-based thin films. The exploration of new method which made low cost and high quality sample seems to be very important now. Considering the practical application

searching a higher Curie temperature thin magnetic semiconductor material also has an important value. Using PVA method

the Co

and Fe

ions doped ZnO diluted magnetic semiconductor thin films were prepared. This method which has many advantages:such as simple operation

short sample preparation time

low cost

may conveniently be used to prepare big area semiconductor thin film. At the same time

PVAmethod can be used to prepare uniform and high purity sample

also has advantageous for the doping control. The structure of Zn

0.88

0.12

O thin films under different annealing time and its photoluminescence were investigated. Different preparation conditions will influence on the microstructure

ferromagnetism and photoluminescence of samples obviously. Using PVA method we prepared the Zn

0.88

0.12

O sample which has obviously (002) orientation. We also analyzed the origin of the ultraviolet peak and the blue light peak. Using vibrating sample magnetometer (VSM) we found that both Zn

0.88

0.12

O and Zn

0.88

(Co

0.5

)

0.12

O thin films have ferromagnetism at room temperature

and the Zn

0.88

0.12

O thin film has higher ferromagnetic intensity than that of the Zn

0.88

(Co

0.5

)

0.12

O thin film. Through the structure analysis and the computation

we confirmed that the magnetic ions entered into the ZnO crystal structure indeed.

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