ZnO is a very useful and interesting ceramic material

since it exhibits a variety of properties such as semiconductive

photoconductive

piezoelectric and electro-optical behavior. Due to these characteristics

structure

properties and preparation methods of ZnO films have been extensively studied for practical applications. Different from other preparation methods

a series of ZnO films on glass substrate have been prepared by ion beam reactive sputtering with metal Zn (purity 99.99%) as target. X-ray diffraction (XRD) spectra analysis of the ZnO films indicates that the films are single (0002)-oriented growth although preparation condition changed. Temperature of substrate is a key factor on preferential orientation growth of ZnOfilm in (0002) direction. Ratio of Ar/O

2

(sputtering gas) has a little affection on structure of the films. 360℃ is a most adaptive substrate temperature for ZnOfilms single (0002)-oriented growth

and high quality ZnOfilm with absolute

c

-axis orientation has been successfully achieved at this temperature. Photoluminescence (PL) spectra show that some PLpeaks are very strong at wave band of both ultraviolet (364 nm) and blue-green (470 nm) under excitation of 270 nm

another PLweak peaks appear at violet (398 nm)

blue (452 nm) and infrared (722 nm) band. Among the peaks

PLpeak of 470 nm has not been reported up to now. Annealing in air has significant influence on structure

photoluminescence and electric properties of the films. An appropriate annealing temperature can promote single c-axis oriented growth of ZnO films

make crystal grains much bigger

luminescence intensifying and make resistance raising of the ZnO films. 400℃ is a optimum annealing temperature for single (0002)-oriented growth of the ZnO films and enhancing the film's luminescence intensity. Resistance of ZnO films increase with not only pressure of oxygen enlarging

but also substrate temperature raising. After 350℃ annealing in air

ZnO films become insulators. The results indicate the film's PL property has no relationship with its resistance.