Influence of PVK Hole Transport Layer on Performance of Organic Electroluminescent Devices

LI Wei-zhi; YANG Xiu; JI Xing-qiao; ZHONG Zhi-you; JIANG Ya-dong

doi:null

您当前的位置：

首页 >

文章列表页 >

Influence of PVK Hole Transport Layer on Performance of Organic Electroluminescent Devices

更新时间：2020-08-11

- Influence of PVK Hole Transport Layer on Performance of Organic Electroluminescent Devices
- Chinese Journal of Luminescence Vol. 27, Issue 5, Pages: 719-723(2006)
- 作者机构：
  
  电子科技大学, 光电信息学院,四川成都,610054
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN383.1;TN873.3
- Received：06 November 2005，
  
  Revised：2005-12-20，
  
  Published：20 September 2006
- 稿件说明：
移动端阅览
黎威志, 阳秀, 季兴桥, 钟志有, 蒋亚东. PVK空穴传输层对有机电致发光器件性能的影响[J]. 发光学报, 2006,27(5): 719-723

LI Wei-zhi, YANG Xiu, JI Xing-qiao, ZHONG Zhi-you, JIANG Ya-dong. Influence of PVK Hole Transport Layer on Performance of Organic Electroluminescent Devices[J]. Chinese Journal of Luminescence, 2006,27(5): 719-723
黎威志, 阳秀, 季兴桥, 钟志有, 蒋亚东. PVK空穴传输层对有机电致发光器件性能的影响[J]. 发光学报, 2006,27(5): 719-723 DOI：

LI Wei-zhi, YANG Xiu, JI Xing-qiao, ZHONG Zhi-you, JIANG Ya-dong. Influence of PVK Hole Transport Layer on Performance of Organic Electroluminescent Devices[J]. Chinese Journal of Luminescence, 2006,27(5): 719-723 DOI：

摘要

以聚乙烯基咔唑poly(N-vinylcarbazole)(PVK)旋涂层为空穴传输层

着重研究了PVK层厚度对双层器件氧化铟锡(ITO)/PVK/tris-(8-hydroxyquinoline)aluminum(Alq

)/Mg:Ag/Al器件性能的影响。测试结果表明

当Alq

层厚度一定时(50nm)

只有PVK层为适当厚度(18nm)时双层器件才有最优良的器件性能

即最低的起亮电压

最高的发光亮度和效率。同时对比了不同PVK层厚度的PVK/Alq

双层器件之间以及PVK/Alq

与N

N′-bis-(1-naphthyl)-N

N′-diphenyl-(1

1′-biphenyl)-4

4′-diamine(NPB)/Alq

双层器件寿命的差异。测试结果表明

尽管越厚的PVK层对应的PVK/Alq

双层器件发光性能并不是越好

但器件寿命越长。原因是器件Alq

层内形成的Alq

越少

因此器件稳定性越好;而PVK/Alq

与NPB/Alq

双层器件寿命的差异来自不同空穴传输层的制备工艺和能级结构的不同。

Abstract

With poly (N-vinylcarbazole) (PVK) layer used as hole transport layer (HTL)

influence of thickness of PVKlayer on indium tin oxide (ITO)/PVK/tris-(8-hydroxyquinoline) aluminum (Alq

)/Mg:Ag/Al double-layer (DL) device’s performance was investigated.Measurements showed that when the thickness of Alq

was fixed to be 50 nm

the device with 18 nm PVK HTLhas the best performance of light emission

e.g

the lowest turn-on voltage

the highest brightness and efficiency.Differences between these PVK DLdevices and N

N’-bis-(1-naphthyl)-N

N’-diphenyl-(1

1’-biphenyl)-4

4’-diamine (NPB)/Alq

DLdevices’ lifetime were compared.Results showed that the device with thickest PVKlayer has the longest lifetime.The different lifetime between PVKand NPB DLdevice originated from the differences between fabrication techniques and energy band structure of the two HTLs.

关键词

Keywords

references

Views

177

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Vapor Deposition of All Inorganic Perovskite Transport Layer and Emission Layer to Improve Performance of Red Perovskite Light-emitting Diodes

Recent Progress of Ultraviolet and Near-ultraviolet Organic Light-emitting Diodes

All-inorganic p-i-n Photodetector Based on Lead-free CuSCN/Cs₃Bi₂I₆Br₃Nanofilm

Preparation of WS₂ Nanosheets and Their Application for Hole Transport Layer in Perovskite Solar Cells

The Electroluminescent Performance of OLED Based on Different Hole Transport Layer

Related Author

FENG Jing

LIU Yuefeng

LIU Hefu

WANG Hanyang

TANG Jianxin

LI Yanqing

XIE Fengming

ZHU Yuanye

Related Institution

College of Electronic Science and Engineering， Jilin University

Institute of Functional Nano & Soft Materials， Soochow University

School of Physics and Electronic Sciences， East China Normal University

Ministry⁃of⁃Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules， Hubei University

Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices， College of Physics and Electronic Science， Hubei University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰