Influence of PVK Hole Transport Layer on Performance of Organic Electroluminescent Devices

LI Wei-zhi; YANG Xiu; JI Xing-qiao; ZHONG Zhi-you; JIANG Ya-dong

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Influence of PVK Hole Transport Layer on Performance of Organic Electroluminescent Devices

更新时间：2020-08-11

- Influence of PVK Hole Transport Layer on Performance of Organic Electroluminescent Devices
- Chinese Journal of Luminescence Vol. 27, Issue 5, Pages: 719-723(2006)
- 作者机构：
  
  电子科技大学, 光电信息学院,四川成都,610054
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN383.1;TN873.3
- Received：06 November 2005，
  
  Revised：20 December 2005，
  
  Published：20 September 2006
- 稿件说明：
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黎威志, 阳秀, 季兴桥, 钟志有, 蒋亚东. PVK空穴传输层对有机电致发光器件性能的影响[J]. 发光学报, 2006,27(5): 719-723

LI Wei-zhi, YANG Xiu, JI Xing-qiao, ZHONG Zhi-you, JIANG Ya-dong. Influence of PVK Hole Transport Layer on Performance of Organic Electroluminescent Devices[J]. Chinese Journal of Luminescence, 2006,27(5): 719-723
黎威志, 阳秀, 季兴桥, 钟志有, 蒋亚东. PVK空穴传输层对有机电致发光器件性能的影响[J]. 发光学报, 2006,27(5): 719-723 DOI：

LI Wei-zhi, YANG Xiu, JI Xing-qiao, ZHONG Zhi-you, JIANG Ya-dong. Influence of PVK Hole Transport Layer on Performance of Organic Electroluminescent Devices[J]. Chinese Journal of Luminescence, 2006,27(5): 719-723 DOI：

摘要

以聚乙烯基咔唑poly(N-vinylcarbazole)(PVK)旋涂层为空穴传输层

着重研究了PVK层厚度对双层器件氧化铟锡(ITO)/PVK/tris-(8-hydroxyquinoline)aluminum(Alq

)/Mg:Ag/Al器件性能的影响。测试结果表明

当Alq

层厚度一定时(50nm)

只有PVK层为适当厚度(18nm)时双层器件才有最优良的器件性能

即最低的起亮电压

最高的发光亮度和效率。同时对比了不同PVK层厚度的PVK/Alq

双层器件之间以及PVK/Alq

与N

N′-bis-(1-naphthyl)-N

N′-diphenyl-(1

1′-biphenyl)-4

4′-diamine(NPB)/Alq

双层器件寿命的差异。测试结果表明

尽管越厚的PVK层对应的PVK/Alq

双层器件发光性能并不是越好

但器件寿命越长。原因是器件Alq

层内形成的Alq

越少

因此器件稳定性越好;而PVK/Alq

与NPB/Alq

双层器件寿命的差异来自不同空穴传输层的制备工艺和能级结构的不同。

Abstract

With poly (N-vinylcarbazole) (PVK) layer used as hole transport layer (HTL)

influence of thickness of PVKlayer on indium tin oxide (ITO)/PVK/tris-(8-hydroxyquinoline) aluminum (Alq

)/Mg:Ag/Al double-layer (DL) device’s performance was investigated.Measurements showed that when the thickness of Alq

was fixed to be 50 nm

the device with 18 nm PVK HTLhas the best performance of light emission

e.g

the lowest turn-on voltage

the highest brightness and efficiency.Differences between these PVK DLdevices and N

N’-bis-(1-naphthyl)-N

N’-diphenyl-(1

1’-biphenyl)-4

4’-diamine (NPB)/Alq

DLdevices’ lifetime were compared.Results showed that the device with thickest PVKlayer has the longest lifetime.The different lifetime between PVKand NPB DLdevice originated from the differences between fabrication techniques and energy band structure of the two HTLs.

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Related Institution

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