Electrical and Optical Characteristics of Li-doped ZnO

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Electrical and Optical Characteristics of Li-doped ZnO

更新时间：2020-08-11

- Electrical and Optical Characteristics of Li-doped ZnO
- Chinese Journal of Luminescence Vol. 27, Issue 6, Pages: 945-948(2006)
- 作者机构：
  
  1. 中国科学院, 激发态物理重点实验室,吉林长春,130033
  2. 中国科学院, 研究生院北京,100049
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472.3;O482.31
- Received：20 December 2005，
  
  Revised：01 March 2006，
  
  Published：20 November 2006
- 稿件说明：
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王相虎, 姚斌, 申德振, 张振中, 吕有明, 李炳辉, 魏志鹏, 张吉英, 赵东旭, 范希武. Li掺杂ZnO薄膜的导电和发光特性[J]. 发光学报, 2006,27(6): 945-948

WANG Xiang-hu, YAO Bin, SHEN De-zhen, ZHANG Zhen-zhong, LÜ You-ming, LI Bing-hui, WEI Zhi-peng, ZHANG Ji-ying, ZHAO Dong-xu, FAN X W. Electrical and Optical Characteristics of Li-doped ZnO[J]. Chinese Journal of Luminescence, 2006,27(6): 945-948
王相虎, 姚斌, 申德振, 张振中, 吕有明, 李炳辉, 魏志鹏, 张吉英, 赵东旭, 范希武. Li掺杂ZnO薄膜的导电和发光特性[J]. 发光学报, 2006,27(6): 945-948 DOI：

WANG Xiang-hu, YAO Bin, SHEN De-zhen, ZHANG Zhen-zhong, LÜ You-ming, LI Bing-hui, WEI Zhi-peng, ZHANG Ji-ying, ZHAO Dong-xu, FAN X W. Electrical and Optical Characteristics of Li-doped ZnO[J]. Chinese Journal of Luminescence, 2006,27(6): 945-948 DOI：

摘要

通过将含有原子数分数为2%锂的Zn-Li合金薄膜和金属锌薄膜在500℃氮气氛中退火2h

然后在700℃氧气氛下退火1h的方法分别制备出ZnO:Li和ZnO薄膜。Hall效应测量表明

其导电类型分别为p型和n型。通过He-Cd激光器的325nm线激发

测量了样品室温和低温(12K)光致发光光谱

并根据ZnO:Li薄膜的低温发光光谱特征

计算出Li相关受主能级位于价带顶137meV处。

Abstract

The difficulty in the fabrication of p-type ZnOhinders the development of ZnO-based devices. Group-Ⅰand group-V elements substituting for Zn and Ocan respectively form the different acceptor dopants. Park C Hcalculated the energy levels of different acceptor dopants in ZnO

and it is found that group-Ⅰ elements substituting for Zn are of a shallower acceptor level than group-V elements substituting for O. Especially the acceptor level of Li substituting for Zn (Li

) is 0.09 eV

which is the shallowest value among the energy levels of acceptor dopants in ZnO reported. However

when Li atom substitutes for Zn

it will easily be accompanied by the formation of interstitial Li (Li

)

which is likely to be shallow donor. This causes the p-type doping to be limited by the formation of a Li

-Li

complex donor. Based on above

Li was used as the acceptor dopant substituting for Zn in this work. In order to repress the formation of Li

nitrogen was used as a codopant with lithium by a two step annealing process to form Li

-N complex acceptor.

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Related Author

ZHAO Peng-cheng

ZHANG Zhen-zhong

YAO Bin

LI Bing-hui

WANG Shuang-peng

JIANG Ming-ming

ZHAO Dong-xu

SHAN Chong-xin

Related Institution

State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

University of Chinese Academy of Sciences

Department of Physics, Jilin University

College of Physics&Electronics Information Engineering, Minjiang University

College of Optoelectronic Engineering, Chongqing University

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