Preparation,Structural and Strain Properties of ZnO Thin Films

DENG Lei-lei; WU Sun-tao; LI Jing

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Preparation,Structural and Strain Properties of ZnO Thin Films

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- Preparation,Structural and Strain Properties of ZnO Thin Films
- Chinese Journal of Luminescence Vol. 27, Issue 6, Pages: 922-926(2006)
- 作者机构：
  
  1. 厦门大学, 物理系, 福建, 厦门, 361005
  2. 厦门大学, 萨本栋微机电研究中心,福建厦门,361005
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472.3
- Received：20 December 2005，
  
  Revised：01 March 2006，
  
  Published：20 November 2006
- 稿件说明：
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邓雷磊, 吴孙桃, 李静. ZnO薄膜的制备和结构特性及应变[J]. 发光学报, 2006,27(6): 922-926

DENG Lei-lei, WU Sun-tao, LI Jing. Preparation,Structural and Strain Properties of ZnO Thin Films[J]. Chinese Journal of Luminescence, 2006,27(6): 922-926
邓雷磊, 吴孙桃, 李静. ZnO薄膜的制备和结构特性及应变[J]. 发光学报, 2006,27(6): 922-926 DOI：

DENG Lei-lei, WU Sun-tao, LI Jing. Preparation,Structural and Strain Properties of ZnO Thin Films[J]. Chinese Journal of Luminescence, 2006,27(6): 922-926 DOI：

摘要

在SiO

/Si衬底上面

利用射频磁控溅射方法

在不同的工艺条件下生长ZnO薄膜

然后进行热处理(600～1000℃退火).研究了氩氧比和退火温度对薄膜结晶性能的影响.薄膜的表面结构和晶体特性通过扫描电子显微镜(SEM)、X射线衍射(XRD)来进行表征.结果表明:所制备的薄膜为多晶纤锌矿结构

具有垂直于衬底的

轴(002)方向的择优取向性.热处理可使ZnO(002)衍射峰相对强度增强

半峰全宽(FWHM)变小

即退火使

轴生长的薄膜取向性增强.未经退火的ZnO薄膜存在张应力

经过热处理后应力发生改变

最后变成压应力

并且随着退火温度的升高

压应力逐渐增大.

Abstract

ZnO has awide band gap of 3.37 eV

low lasing power threshold for optical pumping at room temperature

and UV emission resulted from a large exciton binding energy of 60meV

so itcan be used as light emitting diodes (LED)

photodetectors

and shortwave laser. To fabricate the devices

high quality ZnO thin films are often required

such as they should have good crystal properties with high

-axis orientation and low stress. Many researches have been done on the preparation of high quality ZnO films in recentyears.

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