Zn

1-x

Mn

x

Se belongs to a class of materials called diluted magnetic semiconductors (DMS) where their cations in a non-magnetic compound were partially replaced by magnetic ions. Within the rapidly evolving field of semiconductor spintronics researchers try to make the spin injection come true.Several approaches for spin injection have been realized

one of them is from a diluted magnetic semiconductor to a ferromagnetic semiconductor layer in an external magnetic field. It is important to prepare the polarized layer and to study their properties

since Zn

1-x

Mn

x

Se as a polarized layer is popular with many researchers. In recent years

the material growth technique of Zn

1-x

Mn

x

Se has been improved greatly. However

fewer researches related to Zn

1-x

Mn

x

Se epilayers grown by metal-organic chemical vapor deposition (MOCVD) are reported than those grown by molecular beam epitaxy (MBE)

although is more suitable for large scale production. Zn

1-x

Mn

x

Se thin films with different Mn compositions are grown by metal-organic chemical vapor deposition (MOCVD) on GaAs substrate. We use Tricarbonyl (methylcyclopentadienyl) manganese (TCMn) as Mn source

use dime-thylzinc (DMZn) and hydrogen selenide (H

2

Se) as Zn source and Se source

respectively. The growth temperature is 480℃.The growth pressure is 104 Pa. The thickness of the samples are 150 nm measured by scanning electron microscope (SEM).Good crystallinity of sample is evidenced by X-ray diffraction and rocking curve measurements. Magneto-optical properties of Zn

0.88

Mn

0.12

Se thin films are investigated in magnetic fields up to 8 T. Two emission peaks near the band edge were observed. At the same time

a relative change of the emission intensity between two peaks is shown

we attribute the two peaks to the free exciton emission and Mn induced bound state excitonic emission respectively. Meanwhile

the band gap shows a red shift with increasing magnetic field due to the large sp-d change interaction