Effect of the InxGa1-xAs Buffer Layer Compositions on Crystalline Quality and Surface Morphology of In0.82Ga0.18As Grown by Low Pressure MOCVD

ZHANG Tine-min; MIAO Guo-qing; JIN Yi-xin; XIE Jian-chun; JIANG Hong; LI Zhi-ming; SONG Ha

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Effect of the In_xGa_1-xAs Buffer Layer Compositions on Crystalline Quality and Surface Morphology of In_0.82Ga_0.18As Grown by Low Pressure MOCVD

更新时间：2020-08-11

- Effect of the In_xGa_1-xAs Buffer Layer Compositions on Crystalline Quality and Surface Morphology of In_0.82Ga_0.18As Grown by Low Pressure MOCVD
- Chinese Journal of Luminescence Vol. 27, Issue 5, Pages: 797-800(2006)
- 作者机构：
  
  1. 中国科学院, 激发态物理重点实验室,吉林长春,130033
  2. 中国科学院, 研究生院北京,100049
- 作者简介：
- 基金信息：
- DOI：
  CLC： O471.4
- Received：10 January 2006，
  
  Revised：15 April 2006，
  
  Published：20 September 2006
- 稿件说明：
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张铁民, 缪国庆, 金亿鑫, 谢建春, 蒋红, 李志明, 宋航. 缓冲层InxGa1-xAs组分对In0.82Ga0.18As结晶质量和表面形貌的影响[J]. 发光学报, 2006,27(5): 797-800

ZHANG Tine-min, MIAO Guo-qing, JIN Yi-xin, XIE Jian-chun, JIANG Hong, LI Zhi-ming, SONG Hang. Effect of the InxGa1-xAs Buffer Layer Compositions on Crystalline Quality and Surface Morphology of In0.82Ga0.18As Grown by Low Pressure MOCVD[J]. Chinese Journal of Luminescence, 2006,27(5): 797-800
张铁民, 缪国庆, 金亿鑫, 谢建春, 蒋红, 李志明, 宋航. 缓冲层InxGa1-xAs组分对In0.82Ga0.18As结晶质量和表面形貌的影响[J]. 发光学报, 2006,27(5): 797-800 DOI：

ZHANG Tine-min, MIAO Guo-qing, JIN Yi-xin, XIE Jian-chun, JIANG Hong, LI Zhi-ming, SONG Hang. Effect of the InxGa1-xAs Buffer Layer Compositions on Crystalline Quality and Surface Morphology of In0.82Ga0.18As Grown by Low Pressure MOCVD[J]. Chinese Journal of Luminescence, 2006,27(5): 797-800 DOI：

摘要

采用低压金属有机化学气相沉积(LP-MOCVD)技术

两步生长法在InP衬底上制备In

0.82

0.18

As材料.研究缓冲层In

1-x

As的In组分对In

0.82

0.18

As结晶质量和表面形貌的影响.X射线衍射(XRD)用于表征材料的组分和结晶质量.用扫描电子显微镜(SEM)观察样品的表面形貌.实验结果表明

低温生长的缓冲层In

1-x

As的In组分影响高温生长的外延层In

0.82

0.18

As的结晶质量和表面形貌.测量得到四个样品的外延层In

0.82

0.18

As的X射线衍射谱峰半峰全宽(FWHM)为0.596°

0.68°

0.362°和0.391°

分别对应缓冲层In组分

=0.28

0.53

0.82

0.88

当缓冲层In组分是0.82时

FWHM最窄

表明样品的结晶质量最好.SEM观察四个样品的表面形貌

当缓冲层In组分是0.82时

样品的表面平整

没有出现交叉平行线或蚀坑等缺陷

表面形貌最佳.

Abstract

The In

1-x

As material is very important for uncooled infrared detector and has spectral response from 1 μm to 3 μm. In recent years

there are growing needs for high In composition In

1-x

As detectors

the most important applications are spectral imaging including earth observation

remote sensing and environmental monitoring

etc. The In

1-x

As (x

0.53) was grown on semi-insulating (100) Fe-doped InP substrates by LP-MOCVD. The growth was performed using TMIn

TMGa

and AsH3 as growth precursors in a horizontal reactor. Two step method of In

0.82

0.18

As growth that the buffer layer was grown at low temperature of 450℃ and the epilayer was grown at higher temperature of 530℃ was studied. After depositing 300 nm In

1-x

As buffer layer

0.82

0.18

As epilayer with thickness of 1 μm was deposited. It was observed that the different In composition of In

1-x

As buffer layer influence on crystalline quality and surface morphology of In

0.82

0.18

As epilayer. The crystalline quality of the epilayer materials was characterized by X-ray diffraction (XRD). In our experiment

the In composition of the In

1-x

As buffer layers was 0.28

0.53

0.82 and 0.88

respectively. The full-width-at-half-maximum (FWHM) of diffraction peak for the buffer layer of In

0.82

0.18

As is 0.362° and is the narrowest among the four samples. The surface morphology was observed by scanning electron microscopy (SEM). The SEM image of the sample with buffer layer of In

0.82

0.18

As is a flat surface and is better than other samples with cross-hatches

pits or some defects. We found that the In composition of the In

1-x

As buffer can influence on the surface morphology of the In

0.82

0.18

As epilayer. The experiments show the crystalline quality and the surface morphology of the In

0.82

0.18

As epilayer is optimum when the In composition of buffer layer is the same as that of the epilayer.

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Related Institution

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Department of Physics, Xiamen University, Xiamen 361005, China

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