The group Ⅲ nitrides GaN AlN

InN and their ternary compounds display a promising potential for optoelectronics applications

particularly laser diodes emitting in blue and ultraviolet range.These materials are well suited to form semiconductor quantum well and superlattices in many optoelectroic devices.There is an increasing interest nowadays in the quantum wells generated by nitrides GaN AlN

In Nand their ternary compounds due to conspicuous device applications

such as high-brightness blue(or green) light emitting diodes and laser diodes.However

the properties of the nitride parabolic quantum well materials

to our knowledge

have rarely been investigated.The parabolic quantum well structure has been successfully fabricated by the molecular beam epitaxy growth method.There are two kinds of parabolic quantum well

one is compositional parabolic quantum well

and another is doping parabolic quantum well.Therefore

the research of the nitride parabolic quantum well materials is very needed.In this paper

the energy level of a hydrogenic impurity in GaN/Al

x

Ga

1-x

N compositional parabolic quantum well was investigated by variational method.The ground state energy

the first excited state energy

the binding energy and the 1s→2p± transition energy of the hydrogenic impurity in a GaN/Al

0.3

Ga

0.7

N parabolic quantum well as functions of the well width Lare given.The numerical results indicated that the ground state energy

the first excited state energy

the binding energy and the 1s→2p± transition energy decrease with increasing well width

L

and finally closes to the corresponding values of 3D GaN.The bound degree of the GaN/Al

0.3

Ga

0.7

N parabolic quantum well to the hydrogenic impurity is stranger than that of the GaAs/Al

0.3

Ga

0.7

As parabolic quantum well.Therefore

the electron coupled to a hydrogenic impurity in the GaN/Al

0.3

Ga

0.7

N parabolic quantum well is stable than that in the GaAs/Al

0.3

Ga

0.7

As parabolic quantum well.