Performance Enhancement by Modification of Cathode with a Thin LiF Layer in OELDs

HUANG Yong-hui; LI Hong-jian; DAI Guo-zhang; XIE Qiang; PAN Yan-zhi; DAI Xiao-yu

doi:null

您当前的位置：

首页 >

文章列表页 >

Performance Enhancement by Modification of Cathode with a Thin LiF Layer in OELDs

更新时间：2020-08-11

- Performance Enhancement by Modification of Cathode with a Thin LiF Layer in OELDs
- Chinese Journal of Luminescence Vol. 26, Issue 6, Pages: 737-742(2005)
- 作者机构：
  
  1. 湖南大学应用物理系,湖南长沙,410082
  2. 湖南大学应用物理系,湖南长沙,410083
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304
- Received：13 December 2004，
  
  Revised：12 September 2005，
  
  Published：20 November 2005
- 稿件说明：
移动端阅览
黄永辉, 李宏建, 代国章, 谢强, 潘艳芝, 戴小玉. 以LiF修饰阴极的有机电致发光器件性能的提高[J]. 发光学报, 2005,26(6): 737-742

HUANG Yong-hui, LI Hong-jian, DAI Guo-zhang, XIE Qiang, PAN Yan-zhi, DAI Xiao-yu. Performance Enhancement by Modification of Cathode with a Thin LiF Layer in OELDs[J]. Chinese Journal of Luminescence, 2005,26(6): 737-742
黄永辉, 李宏建, 代国章, 谢强, 潘艳芝, 戴小玉. 以LiF修饰阴极的有机电致发光器件性能的提高[J]. 发光学报, 2005,26(6): 737-742 DOI：

HUANG Yong-hui, LI Hong-jian, DAI Guo-zhang, XIE Qiang, PAN Yan-zhi, DAI Xiao-yu. Performance Enhancement by Modification of Cathode with a Thin LiF Layer in OELDs[J]. Chinese Journal of Luminescence, 2005,26(6): 737-742 DOI：

摘要

提出了用一种无机半导体的模型来计算有机电致发光器件(OELDs)的

J-V

特性.通过在金属/有机物界面插入薄LiF层

由此引入的偶极子能极大地降低了电子的注入势垒和OELDs的开启电压.从而

载流子的注入得到了平衡

OELDs的性能得到了较大提高.经过数值计算

发现LiF插入层有一个约为1.5~5.0nm的最优厚度.LiF层太厚或太薄都会提高器件的开启电压、降低器件的性能.结果表明:这一模型可以用来解释OELD通过LiF修饰阴极后性能的提高.

Abstract

A model for inorganic semiconductor has been presented to calculate the

J-V

characteristics of organicelectroluminescent devices(OELDs).The additional dipole energy introduced by inserting a thin LiF layer at metal/organic interface significantly decreases the potential barrier for electrons injection and the turn-on voltage of OELD.The charge carriers injection has been balanced

and then the performance of OELD has been greatly enhanced.Bydetailed numerical calculation

it has been found that the optimal thickness of inserted LiFshould be in the range of 1.5~5.0 nm

too thick or too thin LiFwill increase the turn-on voltage of OELD and degrade its performance.It hasbeen proved that this model is proper to explain the performance enhancement of OELDs via modification of electrodewith LiF.

关键词

Keywords

references

Views

105

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

High-efficiency Flexible Organic Solar Cells with UV-ozone Treated Silver Modification ITO Electrode

High efficiency Green Organic Light-emitting Diode Without Roll-off Under High Current Density

Red Polymer Electrophosphorescent Devices Based on Iridium Complex with Reduced Self-quenching Effect

A New Iridium Complex with Trifluoromethyl-Substituted 2-benzo[b]thiophen-2-yl-pyridine Ligand and Its Application in OLEDs

Related Author

ZHANG Hong-mei

LIU-Huan

WANG Dan-bei

ZHENG Shuang

YAN Min-nan

Wang Ning

QI Jin-gang

HE Xiao-guang

Related Institution

南京邮电大学有机电子与信息显示国家重点实验室培育基地信息材料与纳米技术研究院

南京邮电大学江苏国家先进材料协同创新中心

Physics College, Changchun Normal University

Luminous Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University

Xi'an Modern Chemistry Research Institute

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰