our main research results on waveguid grating domain of integrated optics are introduced as follows.The first
we designed and made Lloyd's simple versatile exposure interferometer.In the same installation
it can be formed by adjusting location of column lens to the straight stripe grating of the equal period
the chirped grating or the curve-grating masks on the photoresist
respectively. And then combining with ion or chemical etching technique
the various waveguid grating devices for integrated optics can be fabricated. The set up can also be used to fabricate volume holographic phase Bragg gratings with slant stripe by adjusting (angles) between sample and mirror. This Lloyd's exposure interferometer compared with traditional double-optical path exposure interferometer has the advantages
such as small-sized
versatile
a few of optical elements
shorter optical path
vibration-proof
small angle exposure and so on. So the technique by using Lloyd's exposure to make photoresist grating masks is called "standard technique"
ane quoted abroad extensively. Up to now. grating devices have successfully been fabricated on varied waveguide materials
such as semiconductors
glasses
polymers and so on
by Lloyd's exposure and ion etching techinque. The second
some research results of the waveguide grating devices in our group since the year 1988 include: (1)The photoresist grating was made on parabolic coupling horns of channel waveguide with 4 μm width of K
+
-Na
+
ion exchange CdS
x
Se
1-x
microcrystal glass to form grating limiter of 12 μJ limited energy threshold. (2) DFB optical bistability device was made on CdS
x
Se
1-x
microcrystal glass waveguide with K
+
-Na
+
ion exchange by Lloyd's exposure and ion etching technique to obtain bistability switch time of 63 ps and threshold average powe of 77 mW. So devices operating with super fast rate and lower power loss were realized.(3)Chirped grating was made on K
+
-Na
+
ion exchange CdS
x
Se
1-x
microcrystal glass wavequide by ion etching to form optical beam scanner. Maximum change quantity of focus location moving was 80 μm in power density of 1.5×10
2
W/cm
2
by using Ar ion laser of 0.514 5 μm wavelength. (4) Poly-layer ZnS/ZnSe thin film (clading) was alternatirely coated on BK7 glass waveguide of Ag
+
-Na
+
ion exchange to form nonlinear waveguide grating device. Then optical interconnection with dynamic seek position characteristic with 3 cm linear space can be realized. (5) Interconnection coupling devices with volume holographic phase Bragg grating-light guided board were fabricated on photopolymer with red sensitive to form the grating-splitting board with equal intensity and successfully used for optical butterfly interconnection network of computer. (6)Volume (holographic) phase Bragg grating was fabricated on same glass light guided board to form optical interconnection of the spot to the spot with semiconductor laser 0.78 μm. Its potential application for optical interconnection (between) two printed was indicated. (7) Wavelength-division multiplexed device on monolithic integrated waveguide was made and measured to get complete separation of double-wavelength of 0.632 8 μm and 0.785 μm.
Design and Incident Angle Directionality Optimization of A Tapered Grating Coupler for 1 550 nm VCSEL-based Silicon Photonic Integration
Localized Field and Recombination Rate Enhancement of Excitons in CsPbBr3 Optical Waveguide
Micro-nano Structures of LED Fabricated by Laser Interference Lithography
SOI Multi-ring Cascade Optic Resonator Filters
FABRICATING OF WAVEGUIDE GRATING BY PHASE MASK TECHNIQUE
Related Author
WANG Yukun
FU Xiyao
FAN Jie
SUN Songwei
SHI Linlin
MA Chao
ZOU Yonggang
Yue SONG
Related Institution
State Key Laboratory of High Power Semiconductor, Changchun University of Science and Technology
State Key Laboratory of Advanced Manufacturing for Optical Systems, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
School of Electronics and Information Engineering, Tianjin Polytechnic University
Tianjin Key Laboratory of Optoelectronic Detection Technology and System, Tianjin 300387, China