FANG Hui-zhi, LU Min, CHEN Zhi-zhong, LU Yu, HU Xiao-dong, YANG Zhi-jian, ZHANG Guo-yi. Structural Characterization of Epitaxial Lateral Overgrowth GaN by MOCVD[J]. Chinese Journal of Luminescence, 2005,26(6): 748-752
FANG Hui-zhi, LU Min, CHEN Zhi-zhong, LU Yu, HU Xiao-dong, YANG Zhi-jian, ZHANG Guo-yi. Structural Characterization of Epitaxial Lateral Overgrowth GaN by MOCVD[J]. Chinese Journal of Luminescence, 2005,26(6): 748-752DOI:
Structural Characterization of Epitaxial Lateral Overgrowth GaN by MOCVD
Effect of Low Growth Pressure of HT-AlN Buffer on GaN Epilayer Grown on Si(111)
Ga2O3 Thin Films Grown on Sapphire by Atmospheric Pressure MOCVD
ZnO Thin Films Grown on GaN/Al2O3 Templates by Atmospheric Pressure MOCVD
GaN Growth on Si(111) by MOCVD
Raman Scattering of GaN and Mg-doped GaN Films Grown by MOCVD
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Related Institution
Key Laboratory of Opto-electronics Technology, Ministry of Education, College of Microelectronics, Beijing University of Technology
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Education Ministry Engineering Research Center for Luminescence Material and Device Nanchang University Nanchang China
Institute of Optoeletronics, Shenzhen University, Key Laboratory of Optoeletronic Devices and Systems, Guangdong Province, Key Laboratory of Optoeletronic Devices and Systems, Ministry of Education