The intense visible photoluminescence(PL) of porous Si has attracted much interest as it opens up the possibility of fabricating light-emitting devices based on silicon technology.Silicon carbide

especially cubic phase(β-SiC)

is an attractive material for applications in high-temperature and high-power electronic devices for its wide band gap

high thermal conductivity and high electron saturation velocity.The development of SiCfor opto-electronic applications has been the subject of intensive research for a long time.We report a preparation of SiC/Si heterostructure by ion implantation of overstoichiometric C

+

to single crystalline silicon substrate with a MEVVA(metal vapor vacuum arc) ion source

then a thermal annealing is performed

β-SiClayer is formed after that

which indicates that surface SiC/Si heterostructure is successfully prepared.The phase transformation characteristics in these SiClayers were studied using FTIRspectroscopy and a de-convolution scheme of the IRspectra into amorphous SiCand β-SiCcomponents.X-ray Photon Spectroscopy(XPS) study the attribute of the Catom

the Atom Force Microscopy(AFM) images show the surface morphology of the annealed samples.The photoluminescence(PL) properties of the as-implanted and annealed samples was studied under the excitation of 355 nm.PLspectra show that there are two main peaks: 430 nm(2.9 eV) and 560 nm(2.2 eV)

the PLintensity achieves the maximum at annealing temperature of 900 ℃

2 h.A nanoscale SiC unit quantum confinement theory and surface state theory are used to explain the phenomenon

it was indicated that the nano SiC and bulk SiCplay key role in the PLprocess

and the surface stat of the SiC nanorod also.