您当前的位置：
首页 >
文章列表页 >
p-n ZnO Light-emitting Diode Fabricated on a-sapphire Substrate
更新时间：2020-08-11

    • p-n ZnO Light-emitting Diode Fabricated on a-sapphire Substrate

    • Chinese Journal of Luminescence   Vol. 26, Issue 4, Pages: 542-544(2005)
    • CLC： TN383.1

    • Received：25 June 2005，

      Revised：19 July 2005，

      Published：20 July 2005

    移动端阅览

  • JIAO Shu-jie, ZHANG Zhen-zhong, LÜ You-ming, SHEN De-zhen, ZHAO Dong-xu, ZHANG Jiying, YAO Bin, FAN X W. p-n ZnO Light-emitting Diode Fabricated on a-sapphire Substrate[J]. Chinese Journal of Luminescence, 2005,26(4): 542-544 DOI：

  •  
  •  

0

Views

115

下载量

1

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

p-type MgZnOS Transparent Conductive Films and p-n Junction Type Self-driven Ultraviolet Photodetectors
Research and Fabrication of 1.55 μm High Power Single Transverse Mode Laser
Research Progress of p-type Doping of β-Ga2O3
Advances in Epitaxial Growth, Structural and Optical Properties of Antimonide-based Type-Ⅱ Superlattices
Temperature Field Distribution and Transmittance Characteristics of VO2 Films Irradiated by Laser

Related Author

GUO Ziman
WANG Yang
LIU Yang
ZHANG Teng
CHEN Jian
LU Yinmei
HE Yunbin
XUE Zhengqun

Related Institution

College of Intelligent Systems Science and Engineering， Hubei Minzu University
School of Materials Science & Engineering， Hubei University
Xiamen Xinnuo Communication Technology CO.， Ltd.
School of Advanced Manufacturing， Fuzhou University
School of Materials Science and Engineering， Harbin Institute of Technology
0