Improved Performance of Eu Complex OLEDs with Microcavity Structure

SUN Xiao-yan; LI Wen-lian; HONG Zi-ruo; CHEN Li-li; CHU Bei; LU Shao-zhe; LI Bin; ZHANG Zhi-qiang; HU Zhi-zhi

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Improved Performance of Eu Complex OLEDs with Microcavity Structure

更新时间：2020-08-11

- Improved Performance of Eu Complex OLEDs with Microcavity Structure
- Chinese Journal of Luminescence Vol. 26, Issue 2, Pages: 262-264(2005)
- 作者机构：
  
  1. 中国科学院长春光学精密机械与物理研究所, 激发态物理重点实验室,吉林长春,130033
  2. 中国科学院研究生院北京,100049
  3. 鞍山科学技术大学, 有机光电子材料研发中心,辽宁鞍山,114044
- 作者简介：
- 基金信息：
- DOI：
  CLC： O431
- Received：12 December 2004，
  
  Revised：30 December 2004，
  
  Published：20 March 2005
- 稿件说明：
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孙小燕, 李文连, 洪自若, 陈莉丽, 初蓓, 吕少哲, 李斌, 张志强, 胡知之. 微腔结构对铕配合物有机电致发光二极管(OLEDs)性能的提高[J]. 发光学报, 2005,26(2): 262-264

SUN Xiao-yan, LI Wen-lian, HONG Zi-ruo, CHEN Li-li, CHU Bei, LU Shao-zhe, LI Bin, ZHANG Zhi-qiang, HU Zhi-zhi. Improved Performance of Eu Complex OLEDs with Microcavity Structure[J]. Chinese Journal of Luminescence, 2005,26(2): 262-264
孙小燕, 李文连, 洪自若, 陈莉丽, 初蓓, 吕少哲, 李斌, 张志强, 胡知之. 微腔结构对铕配合物有机电致发光二极管(OLEDs)性能的提高[J]. 发光学报, 2005,26(2): 262-264 DOI：

SUN Xiao-yan, LI Wen-lian, HONG Zi-ruo, CHEN Li-li, CHU Bei, LU Shao-zhe, LI Bin, ZHANG Zhi-qiang, HU Zhi-zhi. Improved Performance of Eu Complex OLEDs with Microcavity Structure[J]. Chinese Journal of Luminescence, 2005,26(2): 262-264 DOI：

摘要

成功制备了铕配合物的微腔结构有机发光二极管(OLEDs)

其发射层采用质量比为1:3的空穴传输材料(TPD)和电子传输材料(Eu(DBM)

bath)的混合层.该器件实现了Eu

高色纯度红光发射

其色坐标为(

=0.651

=0.338);并克服了微腔器件的发光颜色随探测角度增大而变化的缺点.在微腔器件中

最大亮度在19V时达到1 160cd/m

;在高电流密度时的EL效率得到明显提高.

Abstract

Organic light emitting diodes with microcavity structure have been fabricated. Comparing of the optimized cavity and non-cavity devices

the EL performances of cavity device was improved significantly. The pure-red emission of Eu

was observed

and the CIE coordinates were about (

=0.651

=0.338). Because of the sharp-band emission of Eu

complex

the defect of OLEDs with microcavity structure

causing a blue-shift of emission peak with increasing emission angle

was weakened. The maximum brightness of 1 160cd/m

was achieved at 19V

and the efficiency was enhanced at high current density.

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Related Institution

College of Electronics Engineering, Chongqing University of Posts and Telecommunications

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