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High Quality GaN Grown by Epitaxial Lateral Overgrowth Technique and Epitaxial Defects Observation
更新时间：2020-08-11

    • High Quality GaN Grown by Epitaxial Lateral Overgrowth Technique and Epitaxial Defects Observation

    • Chinese Journal of Luminescence   Vol. 26, Issue 1, Pages: 72-76(2005)
    • CLC： O472.3

    • Received：28 May 2004，

      Revised：08 July 2004，

      Published：20 January 2005

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  • YANG Zhi-jian, HU Xiao-dong, ZHANG Bei, LU Min, LU Yu, PAN Yao-bo, ZHANG Zhen-sheng, REN Qian, XU Jun, LI Zhong-hui, CHEN Zhi-zhong, QIN Zhi-xin, YU Tong-jun, TONG Yu-zhen, ZHANG Guo-yi. High Quality GaN Grown by Epitaxial Lateral Overgrowth Technique and Epitaxial Defects Observation[J]. Chinese Journal of Luminescence, 2005,26(1): 72-76 DOI：

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