Growth and Characteristics of ZnCdSe and ZnSeS Quantum Dots under S-K and V-W Modes

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Growth and Characteristics of ZnCdSe and ZnSeS Quantum Dots under S-K and V-W Modes

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- Growth and Characteristics of ZnCdSe and ZnSeS Quantum Dots under S-K and V-W Modes
- Chinese Journal of Luminescence Vol. 26, Issue 1, Pages: 9-14(2005)
- 作者机构：
  
  中国科学院长春光学精密机械与物理研究所激发态物理重点实验室,吉林长春,130033
- 作者简介：
- 基金信息：
- DOI：
  CLC： O511.2;O482.31
- Received：20 June 2004，
  
  Revised：09 October 2004，
  
  Published：20 January 2005
- 稿件说明：
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范希武, 单崇新, 羊亿, 张吉英, 申德振, 吕有明, 刘益春. 以S-K和V-W模式生长ZnCdSe和ZnSeS量子点及其特性[J]. 发光学报, 2005,26(1): 9-14

FAN X W, SHAN Chong-xin, YANG Yi, ZHANG Ji-ying, SHEN De-zhen, LU You-ming, LIU Yi-chun. Growth and Characteristics of ZnCdSe and ZnSeS Quantum Dots under S-K and V-W Modes[J]. Chinese Journal of Luminescence, 2005,26(1): 9-14
范希武, 单崇新, 羊亿, 张吉英, 申德振, 吕有明, 刘益春. 以S-K和V-W模式生长ZnCdSe和ZnSeS量子点及其特性[J]. 发光学报, 2005,26(1): 9-14 DOI：

FAN X W, SHAN Chong-xin, YANG Yi, ZHANG Ji-ying, SHEN De-zhen, LU You-ming, LIU Yi-chun. Growth and Characteristics of ZnCdSe and ZnSeS Quantum Dots under S-K and V-W Modes[J]. Chinese Journal of Luminescence, 2005,26(1): 9-14 DOI：

摘要

用低压金属有机化学气相外延(LP-MOCVD)技术

以Stranski Krastanow(S-K)模式

在GaAs衬底上生长了CdSe和ZnCdSe量子点(QDs)。用原子力显微镜(AFM)

观测到了外延层低于临界厚度时

CdSe自组装量子点的形成过程

并把其机理归结为表面扩散效应和应变弛豫效应的联合作用。依据理论计算外延层临界厚度值的指导

用LP-MOCVD技术在GaAs衬底上生长了ZnCdSe量子点

详细观测了ZnCdSe量子点的形成和演变

这些过程可用Ostwald熟化过程和形成过程的联合作用来解释。用LP-MOCVD技术

以Volmer Weber(V-W)模式

在GaAs衬底上生长了ZnSeS量子点

随着生长时间的增加

量子点尺寸增大

而量子点密度减少

这些现象可用表面自由能来解释。

Abstract

CdSe self-assembled quantum dots (SAQDs) were grown on GaAs(100) by LP-MOCVD under Stranski-Krastanow(S-K) mode. Formation process of CdSe SAQDs below the critical thickness was observed by atomic force microscopy(AFM) images. It revealed that the formation of CdSe SAQDs below the critical thick was due to the effect of surface diffusion and strain release. ZnCdSe SAQDs were grown on GaAs(100) based on the calculated critical thickness by LP-MOCVD under S-K mode. Two kinds of variations in the QDs appeared over time

the Ostwald ripening process and formation process

which is interpreted by theory of crystal growth. ZnSeS QDs were grown on GaAs(100) by LP-MOCVD under V-W mode. With increasing the growth duration

the size of dots becomes larger and the density of the dots decreases

which is explained by virtue of surface free energy.

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