Numerical Calculation of Continuous Nd：YAG Laser-Annealing of Monocrystalline Silicon

FU Ren-wu; CHEN Chao; Markevich M I

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Numerical Calculation of Continuous Nd：YAG Laser-Annealing of Monocrystalline Silicon

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- Numerical Calculation of Continuous Nd：YAG Laser-Annealing of Monocrystalline Silicon
- Chinese Journal of Luminescence Vol. 21, Issue 4, Pages: 320-323(2000)
- 作者机构：
  
  1. 厦门大学物理系,福建厦门,361005
  2. 白俄罗斯科学院电子学研究所明斯克,220841
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472.3
- Received：20 October 2000，
  
  Published：30 November 2000
- 稿件说明：
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傅仁武, 陈朝, Markevich M I. 单晶Si Nd：YAG激光连续退火的数值计算[J]. 发光学报, 2000,21(4): 320-323

FU Ren-wu, CHEN Chao, Markevich M I. Numerical Calculation of Continuous Nd：YAG Laser-Annealing of Monocrystalline Silicon[J]. Chinese Journal of Luminescence, 2000,21(4): 320-323
傅仁武, 陈朝, Markevich M I. 单晶Si Nd：YAG激光连续退火的数值计算[J]. 发光学报, 2000,21(4): 320-323 DOI：

FU Ren-wu, CHEN Chao, Markevich M I. Numerical Calculation of Continuous Nd：YAG Laser-Annealing of Monocrystalline Silicon[J]. Chinese Journal of Luminescence, 2000,21(4): 320-323 DOI：

摘要

应用固相外延模型来模拟单晶Si的连续Nd:YAG激光退火过程

在低功率密度连续激光退火下

用准静态模型模拟辐照区向非辐照区的径向传导散热。在数值计算中

应用部分线性法处理非线性非齐次热传导方程

得到相应的隐格式差分方程

再用追赶法求解隐格式差分方程

得出绝热边界条件下的温度的时间和空间分布

从而得出激光退火的再结晶厚度。当激光波长=1.06m、功率密度#em/em#

=700W/cm

预热温度T

=523K时

经过0.7秒

表面温度度升到1290K左右

再结晶厚度约为0.5m。

Abstract

The semiconductor solid phase epitaxial model of continuous laser-annealing is used to simulate the laser-annealing process of monocrystalline silicon at the continuous Nd:YAG laser.Specially

at lower power density of laser

quasi-static model is used to simulate the radial heat dissipation from irradiated region to nonirradiated regions.A partial linear method is used to deal with non-homogeneous nonlinear equation of heat conduction.Then a hidden-form differential equation is gotten.Using the program of chasing method to solve the equation

the distribution of temperature(T(z

t))at time and space can be worked out accurately at the condition of adiathermic boundary.Furthermore

the thickness of recrystallization of laser-annealing is gotten.At laser wave =1.06m

the power density of laser I

=700W/cm

and the preheated temperature T

=523K

the result is that the temperature of surface reaches to about 1290K and the thickness of recrystallization is about 0.5m after 0.7sec.

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