Zn

2-x

SiO

4

:x Mn phosphors were synthesized at 1300℃ by high-temperature solid state reaction with silicic acid. X-ray powder diffraction data of Zn

2-x

SiO

4

:x Mn are in agreement with those of the JSPDS 37-1485 standard card

indicating that silicic acid is a good starting material for the synthesis of Zn

2

SiO

4

:Mn. Vacuum UV excitation and emission spectra were studied in detail. Considering the absorption from O

2-

2p orbital to Si

4+

3p orbital transition and that from O

2-

2p orbital to Zn

2+

3d orbital transition in the compounds

the absorption in the range from 200nm to 300nm may be mainly due to O

2-

2p orbital to Zn

2+

3d orbital transition

the absorption below 190nm may be mainly assigned to O

2-

2p orbital to Si

4+

3p orbital transition. The absorption peaks at about 346nm

386nm

420nm

440nm

and 480nm are due to

6

A

1

4

D

4

G transition

respectively. The emission spectrum under 254nm excitation consists of a band peak at about 525nm

this band is attributed to

4

T

1

6

A

1

transition. Considering the positions of Mn

2+

emission in different hosts

it reveals that Mn

2+

ions occupy tetrahedral sites. This result is in good agreement with surroundings of Zn

2+

ions

indicating that Mn

2+

ions replace Zn

2+

ions in the host. The relationship between the emission intensity and the concentration of Mn

2+

under VUV and UV excitation was also investigated. It was also found that the Mn

2+

concentration of the maximum emission under 147nm excitation is about 0.07

that of the maximum emission under 200nm excitation about 0.08

and that of the maximum emission under 254nm excitation about 0.10. This result shows that the mechanism on luminescent quench under VUV excitation is different from that of on luminescent quench under UV excitation. This result indirectly reveals that the absorption band peak at about 240nm is due to O

2-

2p orbital to Zn

2+

3d orbital transition.