808nm QCW SEMICONDUCTOR LASERS ARRAYS

GAO Xin; BO Bac-cue; QU Yi; ZHANG Baoshun; ZHANG Xingde

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808nm QCW SEMICONDUCTOR LASERS ARRAYS

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- 808nm QCW SEMICONDUCTOR LASERS ARRAYS
- Chinese Journal of Luminescence Vol. 20, Issue 4, Pages: 342-345(1999)
- 作者机构：
  
  长春光学精密机械学院, 高功率半导体激光国家重点实验室,吉林长春,130022
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN248.4
- Received：07 June 1999，
  
  Revised：1999-8-20，
  
  Published：30 November 1999
- 稿件说明：
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高欣, 薄报学, 曲轶, 张宝顺, 张兴德. 808nm准连续阵列半导体激光器[J]. 发光学报, 1999,20(4): 342-345

GAO Xin, BO Bac-cue, QU Yi, ZHANG Baoshun, ZHANG Xingde. 808nm QCW SEMICONDUCTOR LASERS ARRAYS[J]. Chinese Journal of Luminescence, 1999,20(4): 342-345
高欣, 薄报学, 曲轶, 张宝顺, 张兴德. 808nm准连续阵列半导体激光器[J]. 发光学报, 1999,20(4): 342-345 DOI：

GAO Xin, BO Bac-cue, QU Yi, ZHANG Baoshun, ZHANG Xingde. 808nm QCW SEMICONDUCTOR LASERS ARRAYS[J]. Chinese Journal of Luminescence, 1999,20(4): 342-345 DOI：

摘要

报道了808nm无铝InGaAsP/GaAs高功率准连续阵列半导体激光器。在频率1000Hz

脉冲宽度200μs

占空比达20%时

单阵列条的输出光功率室温下达到37W。

Abstract

808nm high power semiconductor laser was widely used to pump Nd: YAG laser.Here we report the quasi-continuous wave (QCW) operation of 808urn Al-free InGaAsP/GaAs high-power 1-cm-wide laser array bar. The active layer structure we used here was the separate confine heterostructure (SCH) single quantum well. An output power of 37W with frequeney of 1000Hi

pulse width of 200μs and duty-cycle of 20% was achieved at room temperature when driven by excitation current of 49A

which was the upper limit of our driving source. The slope efficiency of the bar was 1.03W/A.The power efficiency was estimated to be about 39%.

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