OPTICAL PROPERTY OF HEAVILY Mg DOPED GaN GROWN BY MBE

Song Hang; Park S H; Kang T W; Kim T W

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OPTICAL PROPERTY OF HEAVILY Mg DOPED GaN GROWN BY MBE

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- OPTICAL PROPERTY OF HEAVILY Mg DOPED GaN GROWN BY MBE
- Chinese Journal of Luminescence Vol. 20, Issue 2, Pages: 148-151(1999)
- 作者机构：
  
  1. 中国科学院长春物理研究所长春,130021
  2. Department of Physics, Dongguk University,Seoul,Korea,100-715
  3. Department of Physics, Kwangwoon University,Seoul,Korea,139-701
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：01 August 1998，
  
  Published：30 May 1999
- 稿件说明：
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宋航, Park S H, Kang T W, Kim T W. 分子束外延高Mg掺杂GaN的发光特性[J]. 发光学报, 1999,20(2): 148-151

Song Hang, Park S H, Kang T W, Kim T W. OPTICAL PROPERTY OF HEAVILY Mg DOPED GaN GROWN BY MBE[J]. Chinese Journal of Luminescence, 1999,20(2): 148-151
宋航, Park S H, Kang T W, Kim T W. 分子束外延高Mg掺杂GaN的发光特性[J]. 发光学报, 1999,20(2): 148-151 DOI：

Song Hang, Park S H, Kang T W, Kim T W. OPTICAL PROPERTY OF HEAVILY Mg DOPED GaN GROWN BY MBE[J]. Chinese Journal of Luminescence, 1999,20(2): 148-151 DOI：

摘要

采用分子束外延技术在蓝宝石衬底上制备Mg掺杂的立方相p-GaN

并对其不同温度下的光致发光光谱进行了研究。实验观察到高Mg掺杂GaN中施主受主对发光的反常温度行为。理论分析表明

高Mg掺杂GaN中施主受主对的发光受到陷阱与受主间竞争俘获非平衡空穴过程和空穴隧穿输运过程的影响。

Abstract

Mg-doped GaN with cubic structure have been grown by molecular beam epitaxy on sapphire substrate. Temperature-dependent photoluminescence of heavily Mg-doped GaN have been investigated in order to study the properities of donor-acceptor pair recombination. We have found unusual temperature dependent behaviors of donor-acceptor pair recombination in heavily Mg-doped GaN. The photoluminescence intensity of donor-acceptor pair recombination decreases below 35K and then increases as the temperature increases up to 100K. This behavior may be explained by employing three energy level system

e.g. shallow donor level

shallow acceptor level and hole trap level. The main transition processes and their dynamic processes of non equilibrum holes

which bumped by excited laser

have been studied. The holes are caught in the hole traps and they subsequently transfer from the traps to shallow acceptors by tunneling

where recombination with electrons takes place. The theoretical calculations are in accordance with the experiment results. The PL intensity of donor-acceptor recombination in heavily Mg-doped GaN is determined by the effects of hole trap and tunneling.

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