DISLOCATION DENSITY OF GaPⅩⅣN LPE WAFER AND ITS INFLUENCE ON BRIGHTNESS

Li Guiying; Li Yongliang; Wang Yafei; Yang Xizhen; Sun Yinguan

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DISLOCATION DENSITY OF GaPⅩⅣN LPE WAFER AND ITS INFLUENCE ON BRIGHTNESS

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- DISLOCATION DENSITY OF GaPⅩⅣN LPE WAFER AND ITS INFLUENCE ON BRIGHTNESS
- Chinese Journal of Luminescence Vol. 20, Issue 1, Pages: 5-6(1999)
- 作者机构：
  
  1. 北京师范大学分析测试中心北京,100875
  2. 中国科学院半导体研究所半导体材料科学开放实验室北京,100083
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：30 May 1998，
  
  Published：28 February 1999
- 稿件说明：
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李桂英, 李永良, 王亚非, 杨锡震, 孙寅官. GaPⅩⅣN LPE片的位错对发光亮度的影响[J]. 发光学报, 1999,20(1): 5-6

Li Guiying, Li Yongliang, Wang Yafei, Yang Xizhen, Sun Yinguan. DISLOCATION DENSITY OF GaPⅩⅣN LPE WAFER AND ITS INFLUENCE ON BRIGHTNESS[J]. Chinese Journal of Luminescence, 1999,20(1): 5-6
李桂英, 李永良, 王亚非, 杨锡震, 孙寅官. GaPⅩⅣN LPE片的位错对发光亮度的影响[J]. 发光学报, 1999,20(1): 5-6 DOI：

Li Guiying, Li Yongliang, Wang Yafei, Yang Xizhen, Sun Yinguan. DISLOCATION DENSITY OF GaPⅩⅣN LPE WAFER AND ITS INFLUENCE ON BRIGHTNESS[J]. Chinese Journal of Luminescence, 1999,20(1): 5-6 DOI：

摘要

用化学腐蚀配合扫描电镜(SEM)对几种不同来源的国产GaPN液相外延(LPE)材料及各自的衬底的位错密度

和发光亮度进行了测量。结果表明:样品的发光亮度随LPE层的

降低而升高

降低衬底的

可降低LPE层的

Abstract

Using chemical etching combined with SEM measurement

the dislocation densities

of the epilayer and substrate in GaPⅩⅣN LPE wafers from different sources are carried out. The brightness of the samples are measured also. The results indicate that the brightness increases as decreasing of the

of the epilayer and a dicreasing of the epilayer

can be caused by decreasing the subctrate

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