VALENCE BOND OFFSETS OF STRAINED HETEROJUNCTION ZnS/ZnSe, ZnS/ZnSxSe1-x AND ZnSe/ZnSxSe1-x

Cai Shuhui; Wang Renzhi; Zheng Yongmei; Zheng Jincheng

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VALENCE BOND OFFSETS OF STRAINED HETEROJUNCTION ZnS/ZnSe, ZnS/ZnS_xSe_1-x AND ZnSe/ZnS_xSe_1-x

更新时间：2021-03-18

- VALENCE BOND OFFSETS OF STRAINED HETEROJUNCTION ZnS/ZnSe, ZnS/ZnS_xSe_1-x AND ZnSe/ZnS_xSe_1-x
- Chinese Journal of Luminescence Vol. 19, Issue 4, Pages: 293-299(1998)
- 作者机构：
  
  厦门大学物理系厦门,361005
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：25 November 1997，
  
  Published：30 November 1998
- 稿件说明：
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蔡淑惠, 王仁智, 郑永梅, 郑金成. 应变层异质结ZnS/ZnSe、ZnS/ZnS_xSe_1-x和ZnSe/ZnS_xSe_1-x价带带阶的研究[J]. 发光学报, 1998,19(4): 293-299

Cai Shuhui, Wang Renzhi, Zheng Yongmei, Zheng Jincheng. VALENCE BOND OFFSETS OF STRAINED HETEROJUNCTION ZnS/ZnSe, ZnS/ZnS_xSe_1-x AND ZnSe/ZnS_xSe_1-x[J]. Chinese Journal of Luminescence, 1998,19(4): 293-299
蔡淑惠, 王仁智, 郑永梅, 郑金成. 应变层异质结ZnS/ZnSe、ZnS/ZnS_xSe_1-x和ZnSe/ZnS_xSe_1-x价带带阶的研究[J]. 发光学报, 1998,19(4): 293-299 DOI：

Cai Shuhui, Wang Renzhi, Zheng Yongmei, Zheng Jincheng. VALENCE BOND OFFSETS OF STRAINED HETEROJUNCTION ZnS/ZnSe, ZnS/ZnS_xSe_1-x AND ZnSe/ZnS_xSe_1-x[J]. Chinese Journal of Luminescence, 1998,19(4): 293-299 DOI：

摘要

采用基于原子球近似下线性Mufin-Tin轨道(LMTO-ASA)的平均键能计算方法

研究了以ZnS

1-x

为衬底

沿(001)方向外延生长的应变层异质结ZnS/ZnSe、ZnS/ZnS

1-x

和ZnSe/ZnS

1-x

的价带带阶值Δ

(x).研究表明

(x)值随衬底合金组分x单调变化。且两者的关系是非线性的。在此计算结果与其它理论计算和实验结果符合较好。

Abstract

The valence band offset Δ

(

) at strained ZnS/ZnSe

ZnS/ZnS

1-x

and ZnSe/ZnS

1-x

(001) interfaces as a function of the alloy composition

of ZnS

1-x

substrates are studied

usting the average bond energy theory based on LMTO ASA method. It is shown that the variation of Δ

(

) with

is monotonous and nonlinear to some extent. The calculation results are rather good compared with the theoretical and experimental data previously reported.

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