INFLUENCE OF DEFECTS ON THE OPTICAL PROPERTIES OF GaN EPILAYERS

Kang Junyong; Huang Qisheng; Ogawa Tomoya

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INFLUENCE OF DEFECTS ON THE OPTICAL PROPERTIES OF GaN EPILAYERS

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- INFLUENCE OF DEFECTS ON THE OPTICAL PROPERTIES OF GaN EPILAYERS
- Chinese Journal of Luminescence Vol. 20, Issue 1, Pages: 29-31(1999)
- 作者机构：
  
  1. 厦门大学物理系,福建厦门,361005
  2. 学习院大学理学部, 东京都,日本,171
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：30 May 1998，
  
  Published：28 February 1999
- 稿件说明：
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康俊勇, 黄启圣, 小川智哉. GaN外延层中的缺陷对光学性质的影响[J]. 发光学报, 1999,20(1): 29-31

Kang Junyong, Huang Qisheng, Ogawa Tomoya. INFLUENCE OF DEFECTS ON THE OPTICAL PROPERTIES OF GaN EPILAYERS[J]. Chinese Journal of Luminescence, 1999,20(1): 29-31
康俊勇, 黄启圣, 小川智哉. GaN外延层中的缺陷对光学性质的影响[J]. 发光学报, 1999,20(1): 29-31 DOI：

Kang Junyong, Huang Qisheng, Ogawa Tomoya. INFLUENCE OF DEFECTS ON THE OPTICAL PROPERTIES OF GaN EPILAYERS[J]. Chinese Journal of Luminescence, 1999,20(1): 29-31 DOI：

摘要

用金属有机化合物气相外延(MOVEP)方法生长具有不同表面形貌的非掺杂GaN

并对部分样品的外延层表面进行镜面加工。用阴极射线发光、光散射和拉曼散射方法观察GaN中深能级发光、缺陷散射光分布和拉曼散射光频移。结果表明

缺陷不但影响GaN的发光和光散射

而且影响拉曼频移

Abstract

Undoped GaN epilayers with different surface morphologies were grown by MOVPE

and surfaces of part of epilayers were polished. Luminescence distribution of deep levels

scattering light of defects

and Raman shift were measured by cathodoluminescence

light scattering

and Raman scattering

respectively. The results show that the defects in GaN epilayers influence not only on the luminescence and light scattering properties but also on the Raman shifts.

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