Si

1-y

C

y

alloy with carbon composition of 0.5at.% was successfully grown on Si(100) substrate by solid phase epitaxy recrystallization. The result was presented in this paper. With the help of the SiO

2

cap layer

rather uniform carbon profile in amorphous Si layer was obtained by dual-energy implantation. Since ion-flow was small and implantaion time was long enough

respectively

the emergency of β-SiC was avoided and the dynamic annealing effect was depressed. The pre-amorphization of the Si substrate increased the fraction of the substitutional C and the two-step annealing reduced point defects. As a result

Si

1-y

C

y

alloy with high quality was recrystallized on Si substrate.