TRANSPORTION OF ELECTRON IN THE ACCELERATING LAYER a SiO2 OF THIN FILM ELECTROLUMINESCENT DEVICE

Ma Yi; Kuang Xiangjun; Liu Yong; Wang Ping; Yin Ming; Lou Liren; Xia Shangda 

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TRANSPORTION OF ELECTRON IN THE ACCELERATING LAYER a SiO₂ OF THIN FILM ELECTROLUMINESCENT DEVICE

更新时间：2020-08-11

- TRANSPORTION OF ELECTRON IN THE ACCELERATING LAYER a SiO₂ OF THIN FILM ELECTROLUMINESCENT DEVICE
- Chinese Journal of Luminescence Vol. 19, Issue 2, Pages: 129-134(1998)
- 作者机构：
  
  1. 中国科学技术大学物理系合肥,230026
  2. 中国科学院结构分析开放研究实验室, 合肥230026
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：13 August 1997，
  
  Published：30 May 1998
- 稿件说明：
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马义, 邝向军, 刘勇, 王平, 尹民, 楼立人, 夏上达. 薄膜电致发光器件SiO2加速层的电子输运性质[J]. 发光学报, 1998,19(2): 129-134

Ma Yi, Kuang Xiangjun, Liu Yong, Wang Ping, Yin Ming, Lou Liren, Xia Shangda . TRANSPORTION OF ELECTRON IN THE ACCELERATING LAYER a SiO2 OF THIN FILM ELECTROLUMINESCENT DEVICE[J]. Chinese Journal of Luminescence, 1998,19(2): 129-134
马义, 邝向军, 刘勇, 王平, 尹民, 楼立人, 夏上达. 薄膜电致发光器件SiO2加速层的电子输运性质[J]. 发光学报, 1998,19(2): 129-134 DOI：

Ma Yi, Kuang Xiangjun, Liu Yong, Wang Ping, Yin Ming, Lou Liren, Xia Shangda . TRANSPORTION OF ELECTRON IN THE ACCELERATING LAYER a SiO2 OF THIN FILM ELECTROLUMINESCENT DEVICE[J]. Chinese Journal of Luminescence, 1998,19(2): 129-134 DOI：

摘要

考虑了非晶效应和非晶无序弹性散射的影响

通过MonteCarlo方法模拟电子在薄膜电致发光器件(TFEL)的SiO

加速层的散射过程

从理论上描述了SiO

层的加速作用与电流倍增效应

获得了电子平均能量与场强的关系曲线、电离率、电流倍增因子

与实验结果符合较好.

Abstract

The accelerating action and the current multiplication of SiO

used in thin film electroluminescent device were studied theoretically using the Monte Carlo method to simulate the process of electron scattering in SiO

. The amorphous effect and the elastic scattering of disorder were considered. All the properties

such as the relation curve of the electron average energy and the electric field strength

ionization rate

current multiplication coefficient

coincided with the experimental data perfectly.

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