您当前的位置:
首页 >
文章列表页 >
THE COMPARISON OF Si-TIP FABRICATION METHODS BETWEEN DRY ETCHING AND WET ETCHING
更新时间:2020-08-11
    • THE COMPARISON OF Si-TIP FABRICATION METHODS BETWEEN DRY ETCHING AND WET ETCHING

    • Chinese Journal of Luminescence   Vol. 19, Issue 3, Pages: 272-274(1998)
    • Published:30 August 1998

    移动端阅览

  • Wang Weibiao, Jin Changcun, Zhao Haifeng, Wang Yongzhen, Yin Xiuhua, Fan Xiwu, Liang Jingqiu, Yao Jinsong. THE COMPARISON OF Si-TIP FABRICATION METHODS BETWEEN DRY ETCHING AND WET ETCHING[J]. Chinese Journal of Luminescence, 1998,19(3): 272-274 DOI:

  •  
  •  
icon
试读结束,您可以激活您的VIP账号继续阅读。
去激活 >
icon
试读结束,您可以通过登录账户,到个人中心,购买VIP会员阅读全文。
已是VIP会员?
去登录 >

0

Views

307

下载量

0

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

FABRICATION OF SILICON TIPS BY ONE STEP WET CHEMICAL ETCHING
ZnO Nanowire Cold Cathode and Its Application in X-ray Sources
High-power Short-wavelength InAlGaAs/AlGaAs Quantum-dot Superluminescent Diodes
Dry Etching of InP Material Based on Inductivity Coupled Plasma

Related Author

Jin Changchun
Liang Jingqiu
Jiang Jinxiu
Liu Naikang
Yao Jinsong
Zhao Haifeng
Wang Yongzhen
Fan Xiwu

Related Institution

Changchun Institute of Physics, Chinese Academy of Sciences
Changchun Institute of Optics and Fine Mechanics, Chinese Academy of Sciences
School of Electronics and Information Technology, Sun Yat-sen University
School of Physics and Optoelectronic Engineering, Guangdong University of Technology
Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences
0