STUDY OF ACCELERATING LAYER IN TFEL DEVICES

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- STUDY OF ACCELERATING LAYER IN TFEL DEVICES
- Chinese Journal of Luminescence Vol. 18, Issue 4, Pages: 292-294(1997)
- 作者机构：
  
  1. 中国科学院结构分析开放实验室合肥,230026
  2. 中国科学技术大学物理系合肥,230026
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN383.1
- Published：30 November 1997
- 稿件说明：
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刘勇, 王平, 马义, 楼立人, 夏上达. 关于第三代电致发光器件加速层的一些探讨[J]. 发光学报, 1997,18(4): 292-294

Liu Yong, Wang Ping, Ma Yi, Lou Liren, Xia Shangda. STUDY OF ACCELERATING LAYER IN TFEL DEVICES[J]. Chinese Journal of Luminescence, 1997,18(4): 292-294
刘勇, 王平, 马义, 楼立人, 夏上达. 关于第三代电致发光器件加速层的一些探讨[J]. 发光学报, 1997,18(4): 292-294 DOI：

Liu Yong, Wang Ping, Ma Yi, Lou Liren, Xia Shangda. STUDY OF ACCELERATING LAYER IN TFEL DEVICES[J]. Chinese Journal of Luminescence, 1997,18(4): 292-294 DOI：

通过简化的三角势垒模型计算发现在第三代电致发光器件中

CdS层确实对提供初电子有利.用计入非晶效应的Monte Carlo方法进行模拟计算

证明非晶SiO

层比ZnS层有更好的加速作用

从而有利于提高器件蓝红比.

We build a simple model to demonstrate that in TFEL the CdS layer is helpful to improve the number of initial electrons

so that the intensity of luminescence will be strengthened.And by using a modified methods of Monte Carlo simulation

we pointed out that in new structure TFEL devices

the SiO

layer is a better accelerating layer than the ZnS layer.

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