STUDY OF DIODE-LASER END-PUMPED MICROCHIP SOLID-STATE LASER

Huang Yuanqing

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STUDY OF DIODE-LASER END-PUMPED MICROCHIP SOLID-STATE LASER

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- STUDY OF DIODE-LASER END-PUMPED MICROCHIP SOLID-STATE LASER
- Chinese Journal of Luminescence Vol. 18, Issue 3, Pages: 212-216(1997)
- 作者机构：
  
  厦门大学新技术研究所, 厦门 361005
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：18 December 1996，
  
  Published：30 August 1997
- 稿件说明：
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黄元庆. 激光二极管端泵微片固体激光器的研究[J]. 发光学报, 1997,18(3): 212-216

Huang Yuanqing. STUDY OF DIODE-LASER END-PUMPED MICROCHIP SOLID-STATE LASER[J]. Chinese Journal of Luminescence, 1997,18(3): 212-216
黄元庆. 激光二极管端泵微片固体激光器的研究[J]. 发光学报, 1997,18(3): 212-216 DOI：

Huang Yuanqing. STUDY OF DIODE-LASER END-PUMPED MICROCHIP SOLID-STATE LASER[J]. Chinese Journal of Luminescence, 1997,18(3): 212-216 DOI：

摘要

本文介绍了一种用波长为809nm的激光二极管(LD)端面泵浦厚度为1mm的微片Nd:YVO

全固化固体激光器。器件结构上采用了一种独特的光学系统

该系统由分别用于LD激光束的耦合和聚焦的两部分组成。由Nd:YVO

的一个平面与一个曲率半径为21mm的球面镜组成半共焦腔

以获得高的转换效率。文中详细讨论了单横模运转时的泵浦光与激光腔模之间的匹配问题。当泵浦光功率为400mW时

获得152mW的1064nm波长的TEM00模激光输出。器件阈值功率为48.3mW

总的光-光转换效率为38%

斜效率为43%.

Abstract

The diode-laser end-pumped microchip crystal laser is presented in this paper. A novel structure of the all solid-state laser is designed. The microchip Nd:VO

crystal is used as a laser medium

and its thickness is 1mm. The LD at wave-length of 809nm is used as a pump source. It is emphasized that a unique optical coupling system is designed. This system consits of both the coupling system and the focusing system for the LD laser beam. In order to achieve high conversion efficiency and increase the output power

the hemiconfocal resonator is chosen. The resonator is a combination of one of Nd:VO

crystal plane surfaces and spherical mirror of the radius of curvature

=21mm

and the resonator's length is 10.5mm. The mode matching between the pump beam and laser mode in the active material is discussed in detail for single transverse mode operation. The output power of 152mW of TEM

mode at 1064nm has been obtained for pumping power of 400mW. The correspondig laser threshold is 48.3mW. The total optical to optical conversion efficiency and slope efficiency are 38% and 43%

respectively.

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