GROWTH AND CHARACTERIZATION OF THE MOCVD GROWN InAs AND InAs/GaSb HETEROSTRUCTURE

Zhou Tianming; Zhang Baolin; Jiang Hong; Ning Yongqiang; Li Shuwei; Jin Yixin

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GROWTH AND CHARACTERIZATION OF THE MOCVD GROWN InAs AND InAs/GaSb HETEROSTRUCTURE

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- GROWTH AND CHARACTERIZATION OF THE MOCVD GROWN InAs AND InAs/GaSb HETEROSTRUCTURE
- Chinese Journal of Luminescence Vol. 18, Issue 3, Pages: 223-227(1997)
- 作者机构：
  
  中国科学院长春物理研究所长春,130021
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：14 March 1997，
  
  Published：30 August 1997
- 稿件说明：
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周天明, 张宝林, 蒋红, 宁永强, 李树纬, 金亿鑫. InAs和InAs/GaSb异质结的MOCVD生长和表征[J]. 发光学报, 1997,18(3): 223-227

Zhou Tianming, Zhang Baolin, Jiang Hong, Ning Yongqiang, Li Shuwei, Jin Yixin. GROWTH AND CHARACTERIZATION OF THE MOCVD GROWN InAs AND InAs/GaSb HETEROSTRUCTURE[J]. Chinese Journal of Luminescence, 1997,18(3): 223-227
周天明, 张宝林, 蒋红, 宁永强, 李树纬, 金亿鑫. InAs和InAs/GaSb异质结的MOCVD生长和表征[J]. 发光学报, 1997,18(3): 223-227 DOI：

Zhou Tianming, Zhang Baolin, Jiang Hong, Ning Yongqiang, Li Shuwei, Jin Yixin. GROWTH AND CHARACTERIZATION OF THE MOCVD GROWN InAs AND InAs/GaSb HETEROSTRUCTURE[J]. Chinese Journal of Luminescence, 1997,18(3): 223-227 DOI：

摘要

以三甲基铟(TMIn)、砷烷(AsH3)、三甲基镓(TMGa)和三甲基锑(TMSb)为源

用水平常压MOCVD技术

在较低的Ⅴ/Ⅲ比的条件下(1.5～4)于GaAs和GaSb衬底上成功地生长了InAs合金和InAs/GaSb异质结。实验表明

生长温度在500℃～620℃范围内

InAs外延生长是扩散控制的。在Ⅴ/Ⅲ比为2.5时

生长效率(相对Ⅲ族源)为3×10

μm/mol.不掺杂InAs外延层为n型的

室温迁移率为2000cm

/V.s.InAs/GaSb异质结的12KPL谱为一个在375meV处较宽的与杂质相关的跃迁峰

和一个在417meV附近的几乎被杂质峰湮没的带边峰.

Abstract

InAs epilayers and InAs/GaSb heterostructure were grown by atmospheric pressure metalorganic chemical vapor deposition(MOCVD) on GaSb and GaAs substrates with trimethylindium

trimethylgallium

trimethylantimony and arsine as precursors at lower Ⅴ/Ⅲ ratio(1.5～4). The growth efficiency for Ⅲ group precursors equal to 3×10

μm/mol. Experimental results indicated that the growth of InAs was controlled by diffusion for growth temperature t

in 500℃～600℃ range. The undoped InAs epilayer is n type and its mobility at room temperature is 2000cm

/V.s. The PL spectra of InAs/GaSb heterostructure at 12K includes a wider peak at 375meV corresponding to emission processes involving with impurity and defects states and a weak band-edge peak at 417meV.

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