您当前的位置:
首页 >
文章列表页 >
PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROM SiGe/Si QUANTUM WELL WITH LOW TEMPERATURES
更新时间:2020-08-11
    • PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROM SiGe/Si QUANTUM WELL WITH LOW TEMPERATURES

    • Chinese Journal of Luminescence   Vol. 17, Issue 2, Pages: 128-132(1996)
    • Received:26 July 1995

      Published:30 May 1996

    移动端阅览

  • Dong Wenfu, Wang Qiming, Yang Qinqing, Chui Qian, Zhou Junming, Huang Qi. PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROM SiGe/Si QUANTUM WELL WITH LOW TEMPERATURES[J]. Chinese Journal of Luminescence, 1996,17(2): 128-132 DOI:

  •  
  •  
icon
试读结束,您可以激活您的VIP账号继续阅读。
去激活 >
icon
试读结束,您可以通过登录账户,到个人中心,购买VIP会员阅读全文。
已是VIP会员?
去登录 >

0

Views

121

下载量

0

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

Barrier Thickness Designing of InGaN/GaN Multiple Quantum Well for Electroluminescence
Origin of Infrared Photoluminescence from SiO2/Ge:SiO2/SiO2 Sandwiched Structure
PHOTOLUMINESCENCE OF DEFECTS IN NEUTRON IRRADIATED SI-GaAs
THE INVESTIGATION ON THE MULTILAYER VERTICAL ALIGNED InAs QUANTUM DOTS GROWN BY MBE
THE THEORETICAL AND EXPERIMENTAL RESEARCH OF THE NEAR-BAND-GAP OPTICAL TRANSITION IN SiGe/Si QUANTUM WELL

Related Author

ZHAO De-gang
ZHOU Mei
YI Lin-kai
HUANG Jia-lin
BAO Xi-mao
DENG Shu-sheng
TAN Chao
YUAN Ren-kuan

Related Institution

Department of Applied Physics, China Agriculture University
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences
National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University
Department of material physics, University of science and technology of Beijing, Beijing 100083
Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences
0