Zhu Donghai, Fan Tiwen, Liang Jiben, Xu Bo, Zhu Zhanping, Gong Qian, Jiang Chao, Li Hanxuan, Zhou Wei, Wang Zhanguo. THE INVESTIGATION ON THE MULTILAYER VERTICAL ALIGNED InAs QUANTUM DOTS GROWN BY MBE[J]. Chinese Journal of Luminescence, 1997,18(3): 228-231
Zhu Donghai, Fan Tiwen, Liang Jiben, Xu Bo, Zhu Zhanping, Gong Qian, Jiang Chao, Li Hanxuan, Zhou Wei, Wang Zhanguo. THE INVESTIGATION ON THE MULTILAYER VERTICAL ALIGNED InAs QUANTUM DOTS GROWN BY MBE[J]. Chinese Journal of Luminescence, 1997,18(3): 228-231DOI:
THE INVESTIGATION ON THE MULTILAYER VERTICAL ALIGNED InAs QUANTUM DOTS GROWN BY MBE
Multilayer InAs quantum dots (QD) have been grown by MBE on (001) GaAs substrates. TEM observation shows several vertical aligned InAs dot columns. Compared with single InAs QD layer structure
the red shift of the PL wavelength is found for multilayer InAs QD layer structure
which indicate the coupling effect in quantum dots located in the columns. The anomalous decrease of FWHM is attributed to the carrier tunneling between nearby columns.
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