In this paper

we present a full explanation for the average-bond-energy (ABE) model

which was developed

on the basis of numerical calculations

for the determination of valence-band offsets at heterointerfaces. By comparing it with the TB" pinned" model

the dielectric-midgap-energy model

and the charge-neutrality-point model

the relations between the four model theories are shown

and the advantages and limitationsof the ABE model are discussed. In this paper

the ABE model is applied to determining the valence-band offsets at 27 lattice-matched heterointerfaces systematically. The results show:(1)the cation shallow d orbitals play an important role in determining the theoretical values of valence-band offsets; (2)the interface dipole potential is an important contribution to the valence-band offset; (3)the results of ABE model are in good agreement with relevant experimental data

and the accuracy seems to be better than that of several other model theories; (4)the ABE model is not suitable to material systems which do not possess the character of sp

3

hybridization.