A UNIFIED DESIGN OF AC THIN FILM ELECTROLUMINESCENT DISPLAY PANELS

Sun Jiaming; Zhong Guozhu; Fu Guozhu; Zheng Chenwei; Zhang Shuzhi; Fan Xiwu

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A UNIFIED DESIGN OF AC THIN FILM ELECTROLUMINESCENT DISPLAY PANELS

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- A UNIFIED DESIGN OF AC THIN FILM ELECTROLUMINESCENT DISPLAY PANELS
- Chinese Journal of Luminescence Vol. 17, Issue 3, Pages: 191-196(1996)
- 作者机构：
  
  1. 中国科学院长春物理研究所长春,130021
  2. 中国科学院激发态物理开放研究实验室长春,130021
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：11 January 1996，
  
  Published：30 August 1996
- 稿件说明：
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孙甲明, 钟国柱, 付国柱, 郑陈玮, 张曙芝, 范希武. 复合绝缘层交流薄膜电致发光显示屏的综合设计[J]. 发光学报, 1996,17(3): 191-196

Sun Jiaming, Zhong Guozhu, Fu Guozhu, Zheng Chenwei, Zhang Shuzhi, Fan Xiwu. A UNIFIED DESIGN OF AC THIN FILM ELECTROLUMINESCENT DISPLAY PANELS[J]. Chinese Journal of Luminescence, 1996,17(3): 191-196
孙甲明, 钟国柱, 付国柱, 郑陈玮, 张曙芝, 范希武. 复合绝缘层交流薄膜电致发光显示屏的综合设计[J]. 发光学报, 1996,17(3): 191-196 DOI：

Sun Jiaming, Zhong Guozhu, Fu Guozhu, Zheng Chenwei, Zhang Shuzhi, Fan Xiwu. A UNIFIED DESIGN OF AC THIN FILM ELECTROLUMINESCENT DISPLAY PANELS[J]. Chinese Journal of Luminescence, 1996,17(3): 191-196 DOI：

摘要

本文从交流薄膜电致发光(ACTFEL)显示屏的稳定性与可靠性角度出发

兼顾其发光亮度以及驱动电路对屏的RC响应的要求

对ACTFEL矩阵屏的结构进行了综合优化设计.从理论上分析了复合绝缘层SiO

/Ta

击穿方式的转变条件并计算了其合理的厚度比例及ZnS:Mn发光层的厚度和衬底ITO方块电阻的取值范围.通过实验对理论结果进行了验证

并在理论设计的指导下研制了640×480(10英寸)ZnS:MnACTFEL单色计算机终端显示器.

Abstract

his paper made a unified design of ACTFEL matrix display panels.For the purpose of realizing stable driving

high brightness and effective addressing.The optimium thickness ratio of SiO

/Ta

double-stacked insolator layers

the thickness of ZnS:Mn active layers and the time constant of the matrix display panels were calculated.The measured results of the electrical properties of SiO

/Ta

insolator layers and the ACTFEL devices are in good agreement with the theoretical predictions.Under the guidance of theoretical design

a 640×480 computer terminal display with 10 inch in diagonal

was fabricated.The parameters of it are in accordance with the theoretical calculation.

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Related Author

ZHONG Guo-zhu

赵彦立

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Zhao Weiming

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Related Institution

Changchun Institute of Optics, Fine Mechanism and Physics, Chinese Academy of Sceinces

Laboratory of Excited State Processes, Chinses Academy Of Sciences

Changchun Institute of Physics, Chinese Academy of Sciences

Department of Materials Science, Shanghai University Jiading Campus

School of Electronics and Information Technology， Sun Yat-sen University

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