RADIATIVE TRANSITION PROCESSES OF CdSxSe1-x SEMICONDUCTOR NANOCRYSTALLITES

Sun Lingdong; Zhao Jialong; Jin Chunming; Don Kai; Chen Yimin; Huang Shihua; Yu Jiaqi; Xi Shuzhen; Li Lei

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RADIATIVE TRANSITION PROCESSES OF CdS_xSe_1-x SEMICONDUCTOR NANOCRYSTALLITES

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- RADIATIVE TRANSITION PROCESSES OF CdS_xSe_1-x SEMICONDUCTOR NANOCRYSTALLITES
- Chinese Journal of Luminescence Vol. 17, Issue 1, Pages: 1-5(1996)
- 作者机构：
  
  1. 中国科学院激发态物理开放实验室长春,130021
  2. 中国科学院长春光机所应用光学实验室长春,130021
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：23 January 1995，
  
  Published：29 February 1996
- 稿件说明：
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孙聆东, 赵家龙, 靳春明, 窦恺, 陈一民, 黄世华, 虞家琪, 席淑珍, 李磊. CdSxSe1-x纳米微晶的辐射跃迁过程[J]. 发光学报, 1996,17(1): 1-5

Sun Lingdong, Zhao Jialong, Jin Chunming, Don Kai, Chen Yimin, Huang Shihua, Yu Jiaqi, Xi Shuzhen, Li Lei. RADIATIVE TRANSITION PROCESSES OF CdSxSe1-x SEMICONDUCTOR NANOCRYSTALLITES[J]. Chinese Journal of Luminescence, 1996,17(1): 1-5
孙聆东, 赵家龙, 靳春明, 窦恺, 陈一民, 黄世华, 虞家琪, 席淑珍, 李磊. CdSxSe1-x纳米微晶的辐射跃迁过程[J]. 发光学报, 1996,17(1): 1-5 DOI：

Sun Lingdong, Zhao Jialong, Jin Chunming, Don Kai, Chen Yimin, Huang Shihua, Yu Jiaqi, Xi Shuzhen, Li Lei. RADIATIVE TRANSITION PROCESSES OF CdSxSe1-x SEMICONDUCTOR NANOCRYSTALLITES[J]. Chinese Journal of Luminescence, 1996,17(1): 1-5 DOI：

摘要

利用变温吸收光谱和光致发光光谱研究了CdS

1-x

纳米微晶的辐射跃迁过程.由Varshni公式

拟合了微晶的吸收峰随温度的变化.根据变温发射光谱

研究了发光峰位置和温度的依赖关系

并分析了吸收峰和发光峰随温度变化的快慢.对发光的动力学过程.作了简单的分析.

Abstract

Temperature dependence absorption and photoluminescence spectra were used to study the radiative transition processes of CdS

1-x

nanocrystallites. The relationship between the absorption peak and temperature was fitted using Varshni equation. The results imply that the temperature dependence of absorption peak is the same as that of bulk semiconductor. From the temperature dependence photoluminescence

the relationship between photoluminescence peaks and temperature was obtained and the variationrate was analysed. The dynamics of PL process can also be elucidated simply by the temperature dependence of the process.

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