PICOSECOND EXCITONIC OPTICAL BISTABILITY IN ZnSe-ZnTe/GaAs MQWs ON REFLECTION AT ROOM TEMPERATURE
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PICOSECOND EXCITONIC OPTICAL BISTABILITY IN ZnSe-ZnTe/GaAs MQWs ON REFLECTION AT ROOM TEMPERATURE
Chinese Journal of LuminescenceVol. 16, Issue 1, Pages: 16-19(1995)
作者机构:
中国科学院长春物理研究所激发态物理开放实验室 长春,130021
作者简介:
基金信息:
DOI:
CLC:
Published:28 February 1995,
Received:07 April 1994,
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SHEN DEZHEN, FAN XIWU, YANG BAOJUN. PICOSECOND EXCITONIC OPTICAL BISTABILITY IN ZnSe-ZnTe/GaAs MQWs ON REFLECTION AT ROOM TEMPERATURE. [J]. Chinese journal of luminescence, 1995, 16(1): 16-19.
DOI:
SHEN DEZHEN, FAN XIWU, YANG BAOJUN. PICOSECOND EXCITONIC OPTICAL BISTABILITY IN ZnSe-ZnTe/GaAs MQWs ON REFLECTION AT ROOM TEMPERATURE. [J]. Chinese journal of luminescence, 1995, 16(1): 16-19.DOI:
PICOSECOND EXCITONIC OPTICAL BISTABILITY IN ZnSe-ZnTe/GaAs MQWs ON REFLECTION AT ROOM TEMPERATURE
The excitonic optical bistability with picosecond switching time in ZnSe-ZnTe/GaAs multiple quantum wells(MQWs)has been studied on reflection at room.temperature for the first time.The experimental results indicate that the switching threshold from high to low states and the contrast ratio for the optical bistability are about 1.1MW/cm
2
and 6:1
respectively.the major nonlinear mechanism for the optical bistability is due to the change of refractive index caused by the excitonic saturating absorption.