MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERIZATION OF LUMINESCENT Si1-xGex/Si QUANTUM STRUCTURES

Bang Yu; Huang Xingliang; Liu Xiaohan; Huang Daming; Jiang Zuiming; Gong Dawei; Zhang Xiangjiu; Zhao Guoqin

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MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERIZATION OF LUMINESCENT Si_1-xGe_x/Si QUANTUM STRUCTURES

更新时间：2020-08-11

- MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERIZATION OF LUMINESCENT Si_1-xGe_x/Si QUANTUM STRUCTURES
- Chinese Journal of Luminescence Vol. 16, Issue 4, Pages: 285-292(1995)
- 作者机构：
  
  1. 复旦大学应用表面物理国家重点实验室, 上海 200433
  2. 中国科学院红外物理国家实验室, 上海 200083
  3. 复旦大学物理二系, 上海 200433
- 作者简介：
- 基金信息：
- DOI：
  CLC： TB34
- Received：12 December 1994，
  
  Published：30 November 1995
- 稿件说明：
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杨宇, 黄醒良, 刘晓晗, 黄大鸣, 蒋最敏, 龚大卫, 张翔九, 赵国庆. Si1－xGex/Si量子阱发光材料的分子束外延生长及其结构研究[J]. 发光学报, 1995,16(4): 285-292

Bang Yu, Huang Xingliang, Liu Xiaohan, Huang Daming, Jiang Zuiming, Gong Dawei, Zhang Xiangjiu, Zhao Guoqin. MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERIZATION OF LUMINESCENT Si1-xGex/Si QUANTUM STRUCTURES[J]. Chinese Journal of Luminescence, 1995,16(4): 285-292
杨宇, 黄醒良, 刘晓晗, 黄大鸣, 蒋最敏, 龚大卫, 张翔九, 赵国庆. Si1－xGex/Si量子阱发光材料的分子束外延生长及其结构研究[J]. 发光学报, 1995,16(4): 285-292 DOI：

Bang Yu, Huang Xingliang, Liu Xiaohan, Huang Daming, Jiang Zuiming, Gong Dawei, Zhang Xiangjiu, Zhao Guoqin. MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERIZATION OF LUMINESCENT Si1-xGex/Si QUANTUM STRUCTURES[J]. Chinese Journal of Luminescence, 1995,16(4): 285-292 DOI：

摘要

采用固源Si分子束外延

在较高的生长温度于Si(100)衬底上制备出Si

1－x

/Si量子阱发光材料。发光样品的质量和特性通过卢瑟福背散射、X射线双晶衍射及光致发光评估。背散射实验中观察到应变超晶格的反常沟道效应;X射线分析表明材料的生长是共度的、无应力释放的

结晶完整性好。低温光致发光主要是外延合金量子阱中带边激子的无声发射和横光学声子参与的激子复合。并讨论了生长温度对量于阱发光的影响。

Abstract

Band edge luminescence with no deep level emissions is reported for Si

1－x

/Si quantum well structures grown at high substrate temperatures by solid source St mole cular beam epitaxy

no-phonon transitions and transverse optical phonon replicas were clearly identified. Systematic studies based on Rutherford ion backscattering and X-ray diffraction were performed.Backscattering and channeling anomalous spectra was observed due to the strain of superlattice.Photoluminescence(PL)and X-ray rocking curve analysis of the sample indicated that a good crystalline quality and commensurate growth is essential to radiative recombination.The dependence of PL on the growth temperature were discussed.

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