THE DIRECT EVIDENCE OF THE ACCELERATING ACTION OF SiO2 IN TFEL DEVICES

Xu Chunxiang; Lou Zhidong; Xu Xurong

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THE DIRECT EVIDENCE OF THE ACCELERATING ACTION OF SiO₂ IN TFEL DEVICES

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- THE DIRECT EVIDENCE OF THE ACCELERATING ACTION OF SiO₂ IN TFEL DEVICES
- Chinese Journal of Luminescence Vol. 16, Issue 3, Pages: 187-191(1995)
- 作者机构：
  
  天津理工学院材料物理研究所, 天津300191
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：27 October 1994，
  
  Published：30 August 1995
- 稿件说明：
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徐春祥, 娄志东, 徐叙瑢. 薄膜电致发光器件中SiO2加速作用的直接证据[J]. 发光学报, 1995,16(3): 187-191

Xu Chunxiang, Lou Zhidong, Xu Xurong. THE DIRECT EVIDENCE OF THE ACCELERATING ACTION OF SiO2 IN TFEL DEVICES[J]. Chinese Journal of Luminescence, 1995,16(3): 187-191
徐春祥, 娄志东, 徐叙瑢. 薄膜电致发光器件中SiO2加速作用的直接证据[J]. 发光学报, 1995,16(3): 187-191 DOI：

Xu Chunxiang, Lou Zhidong, Xu Xurong. THE DIRECT EVIDENCE OF THE ACCELERATING ACTION OF SiO2 IN TFEL DEVICES[J]. Chinese Journal of Luminescence, 1995,16(3): 187-191 DOI：

摘要

本文通过包含CdS层的薄膜电致发光(TFEL)器件的有关特性的研究

直接证明了SIO

对CdS中产生的电子有良好的加速作用

并获得了阈值电压低、

特性好

亮度较高的红色TFEL器件.我们将硫化镉蒸镀于电致发光器件中

测量这些器件的电学和光学特性

发现含CdS的样品的传导电荷明显大于不含CdS的样品

这说明硫化镉层可以提供较多的电子.但是

样品ITO/SiO

/ZnS:Sm

/SiO

/CdS/Al的发光效率低于不含硫化镐的样品

这说明这些电子在进入ZnS层的过程中能量有所降低.为了提高这些电子的能量

我们制备了样品ITO/SiO

/ZnS:Sm

/SiO

/CdS/Al

使硫化镉中产生的电子先经过SiO

层

再进入发光层.测量结果表明这一样品的最大亮度和发光效率与上述含硫化镉的样品相比分别提高了2.5个和0.5个数量级

与不含硫化镉的样品的亮度接近

但其阈值电压较低

亮度-电压(

)曲线上升部分较陡

且有一段饱和区.在这一样品达到饱和的电压下

不含硫化镉的样品才刚刚起亮

这说明该样品的发光主要是由于硫化镉增加的电子数目对发光的贡献.同时这些电子在SiO

中得到了明显的加速.

Abstract

In this paper

the characteristics of the transfer charge and the brightness andluminous efficiency on the applied voltage are investigated.Accelerating action of SiO

in thin film electroluminescence(TFEL) is proved directly.By accelerating of SiO

abrighter red TFEL device with low threshold voltage and good

charater is obtianed.

charater of the samples with or without CdS are compared.We find that thetransfer charge of the samples with CdS is larger than that of the samples without CdS.This indicates that CdS layer can provide more electrons.The threshold voltage of the samples with CdS is low

and the highest luminescent intensity appears at lower vol tage.At the same voltage

however

the luminescence of the sample without CdS just begins to grow up.The luminous efficiency is lower in case of sample with CdS between ZnS and SiO

.This is attributed to the effect that after entering into the phosphor layer

the energy of these electrons is redused.When CdS layer is put between SiO

and electrode

the luminescent intensity and efficiency are increased in 2.5 and 0.5 orders

respectively.The electrons coming from CdS are accelerated obviously in SiO

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