Abstract Erbium impurities in silicon have the important technological property of exhibiting sharp luminescence at 1.54μm which can be excited either optically or electrically.Erbium-doped silicon is very attractive for obtaining light-emitting devices in silica-based optical fibre communication systems.In this paper results of erbium-implanted silicon were presented.Er

+

ions were implanted into n-type silicon single crystal at room temperature.The range of ion doses investigated in this work varied from 1×10

12

to 1×10

15

cm

-2

.After ion implantation

all of the samples were thermally annealed for 10min at temperature of 700℃～1100℃ with a dry nitrogen atmosphere.In order to test the optical properties of the erbium-implanted silicon samples

the low-temperature(77K)photoluminescence spectra were measured.The samples were excited by the 632

8nm line of He-Ne laser.The luminescent signal was detected by a liquid-nitrogen-cooled germanium detector through MДP-2 type monochromator.