THE CALCULATED DEVIATION OF Ⅴ/Ⅲ RATIOIN THE EPITAXIAL PROCESS GROWINGⅢ-Ⅴ COMPONDS BY MOCVD

Fu Zhuxi; Lin Bixia

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THE CALCULATED DEVIATION OF Ⅴ/Ⅲ RATIOIN THE EPITAXIAL PROCESS GROWINGⅢ-Ⅴ COMPONDS BY MOCVD

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- THE CALCULATED DEVIATION OF Ⅴ/Ⅲ RATIOIN THE EPITAXIAL PROCESS GROWINGⅢ-Ⅴ COMPONDS BY MOCVD
- Chinese Journal of Luminescence Vol. 15, Issue 3, Pages: 185-189(1994)
- 作者机构：
  
  中国科学技术大学物理系合肥,230026
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：03 December 1993，
  
  Published：30 August 1994
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傅竹西, 林碧霞. MOCVD系统外延生长Ⅲ－Ⅴ族化合物时Ⅴ/Ⅲ比的计算偏差[J]. 发光学报, 1994,15(3): 185-189

Fu Zhuxi, Lin Bixia. THE CALCULATED DEVIATION OF Ⅴ/Ⅲ RATIOIN THE EPITAXIAL PROCESS GROWINGⅢ-Ⅴ COMPONDS BY MOCVD[J]. Chinese Journal of Luminescence, 1994,15(3): 185-189
傅竹西, 林碧霞. MOCVD系统外延生长Ⅲ－Ⅴ族化合物时Ⅴ/Ⅲ比的计算偏差[J]. 发光学报, 1994,15(3): 185-189 DOI：

Fu Zhuxi, Lin Bixia. THE CALCULATED DEVIATION OF Ⅴ/Ⅲ RATIOIN THE EPITAXIAL PROCESS GROWINGⅢ-Ⅴ COMPONDS BY MOCVD[J]. Chinese Journal of Luminescence, 1994,15(3): 185-189 DOI：

摘要

本文分析了在生长Ⅲ-Ⅴ族半导体时MOCVD系统中反应气体的输运过程

认为进入反应室的Ⅲ族元素有机金属反应气体的数量是与MOCVD管道系统的结构以及反应气体的扩散系数有关的

并从理论上导出了计算公式。由于MOCVD系统中Ⅲ族元素反应气体的输运特点

实际的Ⅴ/Ⅲ比通小于根据目前方法所计算出的数值。此结果不仅说明生长时的Ⅴ/Ⅲ比高于固态组份比的一种原因

同时也可以解释为什么在生长同种材料时

不同研究者所报导的Ⅴ/Ⅲ比不同。这一结果有利于找出生长时的Ⅴ/Ⅲ比与固态组份间的确定关系。

Abstract

In this paper

the transport process of the gas reactants for growth of

Ⅲ-Ⅴ compounds in MOCVD system has been analyzed.It is given that the mass quantity entered into the reactor of the MOCVD dependes on the structure of the MOCVD and on thecharacter of the reactants.As a result

the transport of the gas reactants in MOCVD systerm is determind not only by the carry of the carry gas but also by the concentration diffusion of the reactants.So that

the mass quantity of the reactants entered into the reactor of the MOCVD is much more than the data calculated in term of carry principle.Accoding to the theory analysis

the calculated formula has been obtained.It gives the dependence of the transported mass quantity of the reactants on the structure ofMOCVD

on the flowes and diffusion coeficient of the gas.Using this formula

some experimental phenomina can be expiated:why the Ⅴ/Ⅲ ratio grwon

Ⅲ-Ⅴ compouds has to be higher than the chemical component of the materials

why the Ⅴ/Ⅲ ratio reported by different papers were different data and why the different apparture used different Ⅴ/Ⅲ ratio to grow same materials.

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