INFLUNCE OF Ⅴ/Ⅲ RATIO ON DISTRIBUTION OF ALUMINUM IN THE AlxGa1-xAs EPITAXY LAYERS BY MOCVD

Fu Zhuxi

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INFLUNCE OF Ⅴ/Ⅲ RATIO ON DISTRIBUTION OF ALUMINUM IN THE Al_xGa_1-xAs EPITAXY LAYERS BY MOCVD

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- INFLUNCE OF Ⅴ/Ⅲ RATIO ON DISTRIBUTION OF ALUMINUM IN THE Al_xGa_1-xAs EPITAXY LAYERS BY MOCVD
- Chinese Journal of Luminescence Vol. 15, Issue 1, Pages: 43-49(1994)
- 作者机构：
  
  中国科学技术大学物理系合肥,230026
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：31 May 1993，
  
  Published：28 February 1994
- 稿件说明：
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傅竹西. 在MOCVD外延生长中Ⅴ/Ⅲ比对AlxGa1-xAs外延层中A1组分分布的影响[J]. 发光学报, 1994,15(1): 43-49

Fu Zhuxi. INFLUNCE OF Ⅴ/Ⅲ RATIO ON DISTRIBUTION OF ALUMINUM IN THE AlxGa1-xAs EPITAXY LAYERS BY MOCVD[J]. Chinese Journal of Luminescence, 1994,15(1): 43-49
傅竹西. 在MOCVD外延生长中Ⅴ/Ⅲ比对AlxGa1-xAs外延层中A1组分分布的影响[J]. 发光学报, 1994,15(1): 43-49 DOI：

Fu Zhuxi. INFLUNCE OF Ⅴ/Ⅲ RATIO ON DISTRIBUTION OF ALUMINUM IN THE AlxGa1-xAs EPITAXY LAYERS BY MOCVD[J]. Chinese Journal of Luminescence, 1994,15(1): 43-49 DOI：

摘要

本实验首次观察到用MOCVD方法在GaAs基片上外延生长Al

1-x

As/GaAs薄膜结构时

生长中所用的Ⅴ/Ⅲ比对外延层中Al组份x的分布的影响.当Ⅴ/Ⅲ比较低时

外延层中的Al组份出现很明显的层状阶梯形三层分布:靠近基片的一层中x值较低

而在外延层的表面层中

值较高.随着生长中所用的Ⅴ/Ⅲ比增加时

Al组份的分布趋于均匀.利用GaAs的高温热分解和Ga、As离子在晶体中的热扩散及其对外延生长的影响

对这一现象作了初步解释.

Abstract

It was observed in our MOCVD system that the aluminum distribution in the Al

1-x

As epitaxy layers varied with the Ⅴ/Ⅲ ratio used in the growth process. When the Ⅴ/Ⅲ ratio was lower

the Al distribution in the grown epitaxy layers was ununi-form and it became three layer’s structures with different Al contents in different layers; one layer which was near the buffer layer had lower Al content

the layer near the surface of the epitaxy layer had higher Al content and the third one located in the middle of the epitaxy layer was the layer with the middle value of the Al content. Increasing the Ⅴ/Ⅲ ratio

the aluminum distribution tended to uniform and the crystal of the epitaxy was more perfect. This phenomenon was attributed to decomposition

diffution and des-orption of Ga and As ions in the epitaxy layers.

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